CCE4503 DIALOG

Document overview

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  • PDF pages: 17

Technical content

Datasheet sections

  • 1 Block Diagram
  • 2 Pinout
  • 3 Characteristics
  • 3.1 Absolute Maximum Ratings
  • 3.2 Recommended Operating Conditions
  • 3.3 Electrical Characteristics
  • 3.4 Thermal Characteristics
  • 4 Functional Description
  • 4.1 Output stage
  • 4.2 Current limit and slew rate configuration
  • 4.3 Automatic Recovery
  • 4.4 Wake-up detection
  • 4.5 Error output handling
  • 4.6 Overtemperature detection
  • 4.7 Allowed Reverse polarity connections
  • 5 Package Information
  • 5.1 Package Outlines
  • 5.2 Soldering Information
  • 6 Ordering Information
  • 7 Application Information

Datasheet Revision 2.3 23.07.2020 CFR0011-120-00 1 of 17 © 2020 Dialog Semiconductor PLEASE NOTE: This Datasheet is preliminary. Please note the available Errata sheet at www.dialog-semiconductor.com/products/cce4503 General Description The CCE4503 is an easy-to-use device side IO-Link compliant transceiver. It combines IO-Link compliant communication capability with advanced protection circuitry and additional features while keeping the application small and simple. Controlled by an UART interface (TXD, RXD, TXEN), the output drivers can be configured as PNP, NPN or Push-Pull. Three LDO options and an automatic wake-up detection simplify the overall system requirements and reduce the need for additional external circuitry. The integrated protection features such as reverse-polarity protection, overcurrent protection, undervoltage detection and thermal protection ensure a robust functionality an d communication. With the small 3mm x 3mm DFN10 package size, it is especially suitable for space limited sensor and actuator applications. Key Features ■ IO-Link Compliant Transceiver ■ One IO-Link channel with up to 250 mA permanent driving current □ 350 mA peak (typ.) ■ Configurable PNP-, NPN- and Push-Pull mode ■ Configurable current limit ■ Configurable slew rate limitation for optimized EMC ■ Wake-up detection ■ Small DFN 10-pin package ■ 3 LDO Options with up to 20 mA □ 3.3V LDO output □ 5V LDO output □ External LDO ■ Reverse-polarity protection ■ Overcurrent detection ■ Undervoltage detection ■ Overtemperature detection

Applications

■ IO-Link Sensors ■ IO-Link Actuators ■ High voltage level shifter ■ Industrial automation

Datasheet Revision 2.3 23.07.2020 CFR0011-120-00 2 of 17 © 2020 Dialog Semiconductor System Diagram Figure 1: System Diagram

Datasheet Revision 2.3 23.07.2020 CFR0011-120-00 5 of 17 © 2020 Dialog Semiconductor

1 Block Diagram

3.3V / 5V Logic Core Protection Protection Protection HV-Driver Diagnostics CCE4503 On Chip Oscillator I/O-Link RX CQ /over temp /over current /under voltage NWUP TXEN TXD ILIM RXD NERR VDD Figure 2: Block Diagram

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2 Pinout

igure 3: DFN10 Pinout Diagram (Top View) Table 1: Pin Description Pin No. Pin Name Type (Table 2) Reset State

Description

1 VDD PWR 3.3V - 5V Supply Voltage Input / Output

2 NERR OD High-Z Error Output (Overcurrent detection, Undervoltage

detection, Overtemperature detection

3 RXD DO Channel signal output

4 TXD DI, PU Channel signal input

5 TXEN DI, PD Channel driver enable

6 ILIM AI Current Limit configuration

7 L- PWR Ground supply (IO-Link)

8 CQ DIO IO-Link data

9 L+ PWR Positive supply (IO-Link)

10 NWUP OD High-Z Wake-up detection (Channel short detection)

PAD Thermal Pad GND Thermal Pad, connect to VSS or leave open

Datasheet Revision 2.3 23.07.2020 CFR0011-120-00 7 of 17 © 2020 Dialog Semiconductor Table 2: Pin Type Definition Pin Type Description Pin Type Description DI Digital input AI Analog input DO Digital output AO Analog output DIO Digital input/output AIO Analog input/output OD Digital Output open drain BP Back drive protection PU Pull-up resistor (fixed) SPU Switchable pull-up resistor PD Pull-down resistor (fixed) SPD Switchable pull-down resistor PWR Power GND Ground

3 Characteristics

3.1 Absolute Maximum Ratings

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, so functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specification are not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Table 3: Absolute Maximum Ratings Parameter Conditions Name Min Max Unit Supply Voltage Static, referenced to VL- VL+ - VL- -40 40 V Supply Voltage Dynamic (t ≤ 100 µs) VL+ - VL-_pulse -42 42 V Operating Temperature Ambient temperature Tamb -40 +125 °C Storage Temperature Tstorage -55 +175 °C Junction Temperature Tj -40 +150 °C Voltage at pin CQ Referenced to VL-: VCQ - VL- VCQ,max VL- VL+ V Voltage at all other pins Referenced to VL- VIOmax -0.7 VDD + 0.7 V ESD protection JS-001-2012 HBM VESD 4 kV JEDEC JESD78D Class1 Ilatchup Tbd mA Soldering Temperature 12 s max. Tsolder Tbd °C Logic Level Supply Voltage VDDmax 6 V Output current At pin RXD, NWUP, NERR IOutMax -5 5 mA

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3.2 Recommended Operating Conditions

Table 4: Recommended Operating Conditions Parameter Conditions Pin Name Min Typ Max Unit Main Supply Voltage 7, 9 VL+ 7 36 V Supply Voltage Ripple Fripple = DC … 100kHz VL+ > 12 V 9 ∆VL+ 1 V Voltage CQ Receiver mode 8 VCQ_MAX VL- VL+ V Logic Level Supply Voltage External Supply 1 VDD 3 5.5 V LDO Output Current 3.3V LDO or 5V LDO, VL+ ≤ 24V

1 IVDD 20 mA

ILIM External Resistor To L- 6 RILIM 0 100 kΩ LDO External Capacitor To L- 1 CLDO 0.8 1 1.2 µF

3.3 Electrical Characteristics

Table 5: Input / Output CQ Parameter Conditions Pin Name Min Typ Max Unit Output voltage low level active pull down, IOL=-200mA 8 VOL 0 1.5 V Output voltage high level active pull up, IOH=+200mA

8 VOH VL+ -

1.5 VL+ V Leakage current input enabled 0 ≤ VCQ ≤ VL+ - 0.1 V

8 Ileak -2 2 µA

8 ICQmax -250 250 mA

RILIM = 0 or hZ RILIM = 100 kΩ

8 IlimP 300

RILIM = 0 or hZ RILIM = 100 kΩ

8 IlimN -400

-70 -350 -50 -300 -35 mA Load capacitance 8 CL 5 nF Inductive load 8 LLoad 1.5 H Output rise/fall time (20% to 80%) Open load, RILIM = 0 or hZ 8 tr,f 869 ns Switch On Time 8 tDLY_LH 4 µs Switch Off Time 8 tDLY_HL 4 µs Short circuit detection time

8 TSHORT 300 µs

RILIM ≠ hZ 8 TSHORT_DIS 15 ms

Datasheet Revision 2.3 23.07.2020 CFR0011-120-00 9 of 17 © 2020 Dialog Semiconductor Parameter Conditions Pin Name Min Typ Max Unit Wake-up detection time

8 TWAKE 40 80 100 µs

8 VIH 10.5 11.75 13 V Input threshold low level 8 VIL 8 9.75 11.5 V Hysteresis between input thresholds high and low

8 VHyst 2 V

Table 6: Digital I/O Parameter Conditions Pin Name Min Typ Max Unit Input Input Voltage LOW VDD = 3.3 V 4, 5 VIN_L_3V3 1 V Input Voltage HIGH VDD = 3.3 V 4, 5 VIN_H_3V3 2.3 V Input Voltage LOW VDD = 5.0 V 4, 5 VIN_L_5V 1.5 V Input Voltage HIGH VDD = 5.0 V 4, 5 VIN_H_5V 3.5 V Input Pull-Up current VDD - VSS = 5.0 V, Vpin=0V 4, 5 IPU_5V 3 30 110 µA Input Pull-Down current VDD - VSS = 5.0 V, Vpin=5.0V 4, 5 IPD_5V -110 -30 -3 µA Output Output Voltage LOW VDD - VSS = 3.3 V IOUT_LOW = 2 mA 2, 3, 10 VOUT_L 0.7 V VDD - VSS = 5.0 V IOUT_LOW = 2 mA 2, 3, 10 VOUT_L 0.8 V Output Voltage HIGH VDD - VSS = 3.3 V IOUT_HIGH = 2 mA 3 VOUT_H 2.6 V VDD - VSS = 5.0 V IOUT_HIGH = 2 mA 3 VOUT_H 4.2 V

Datasheet Revision 2.3 23.07.2020 CFR0011-120-00 10 of 17 © 2020 Dialog Semiconductor Table 7: 3.3V / 5V Voltage Regulator Parameter Conditions Pin Name Min Typ Max Unit Output Voltage VDD 3.3V Regulator 1 VDD3V3 3.0 3.3 3.6 V 5V Regulator 1 VDD5V 4.5 5 5.5 V Voltage Drop Load Current = 20 mA

1 VDO 2 V

Output Current VDD 1 IVDD 20 mA Line regulation IOUT = 1 mA VL+ = 24 V

1 REG 2 mV/V

Load regulation DC current up to 20 mA VL+ = 24 V 1 1 % Power Supply rejection ratio 100 kHz, IOUT = 20 mA

1 PSRR 40 dB

Power-On Threshold Only applies to the driver without LDO (CCE4503-0) 1 VRST 2.7 3.0 V Undervoltage lockout voltage (VL+)

1 VL+,min 6 V

voltage (VDD)

1 VDD,min 3 V

Start-up time 1 5 µs

3.4 Thermal Characteristics

Table 8: Thermal characteristics Parameter Description Conditions Min Typ Max Unit TALARM_H Alarm temperature (higher threshold) 150 165 180 °C TALARM_L Alarm temperature (lower threshold) 140 155 170 °C TWARNING Warning temperature (higher threshold) 125 140 155 °C Rtja Thermal resistance (junction to ambient)

30 K/W

4 Functional Description

4.1 Output stage

output stage is disabled and put into an inactive low-power state. Table 9. NPN mode can be configured by setting TXD high and using TXEN as control pin. PNP mode can be configured by setting TXD low and using TXEN as control pin.

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4.2 Current limit and slew rate configuration

The driver slew rate as well as the current limit is configured by a resistor RILIM connected to ILIM. The value of the resistor intended for configuration is specified between 0Ω and 100 kΩ, where a lower resistor value leads to faster switching and higher maximum currents. The automatic recovery function is only available for RILIM < 1 MΩ. Table 10: Current limit and slew rate configuration Resistor Current limit Slew rate Automatic recovery 0Ω - 100 kΩ 350 mA - 50 mA Fast - slow Yes Open (RILIM > 4 MΩ) 350 mA Fast No Note: If ILIM is left open (RILIM > 4 MΩ) the output driver operates as if connected to VSS (RILIM = 0 Ω), but with automatic recovery disabled.

4.3 Automatic Recovery

If a short is detected, the output stage is automatically disabled after the time tSHORT. The automatic recovery function enables the output again after tSHORT_DIS and checks if the overcurrent is still present (see Figure 4). Channel enabled Channel automatically disabled Channel disabled Overcurrent detected Set TXEN = 1 Reset after tshort_dis Set TXEN = 0 Figure 4: Automatic recovery

4.4 Wake-up detection

An overcurrent pulse of tWAKE will be detected as wake-up pulse. When a wake-up pulse is detected, the output of NWUP will switch from high impedance to low until TXEN is toggled by the microcontroller. An overcurrent pulse > tWAKE will be detected as overcurrent fault condition. An overcurrent pulse < tWAKE will not be detected.

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4.5 Error output handling

The error output NERR combines the indication of three error sources and will be tied low if any fault condition is detected. The following error sources are indicated by NERR:

  • Overtemperature
  • Undervoltage
  • Overcurrent The overtemperature and undervoltage detections are combinational outputs and keep the NERR signal low as long as the error is present. The overcurrent detection is latched and will be reset when the CCE4503 leaves the transmit mode (TXEN = 0).

4.6 Overtemperature detection

The overtemperature detection detects 3 thresholds:

  • At TWARNING the output of NERR will be tied low. This is a combinational signal and cannot be reset by the MCU. It will be reset once the temperature drops below TWARNING.
  • At TALARM_H, the chip will switch off the outputs. This cannot be reset by the MCU.
  • When the temperature drops again below TALARM_L, the output is released and can be controlled by TXEN and TXD.

4.7 Allowed Reverse polarity connections

The CCE4503 is designed to handle all possible permutations of reverse polarity.

Datasheet Revision 2.3 23.07.2020 CFR0011-120-00 14 of 17 © 2020 Dialog Semiconductor

5 Package Information

5.1 Package Outlines

Figure 5: DFN10 Package Outline Drawing

5.2 Soldering Information

Refer to the IPC/JEDEC standard J-STD-020 for relevant soldering information. This document can be downloaded from http://www.jedec.org.

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6 Ordering Information

The ordering number consists of the part number followed by a suffix (shown as "xxxx") indicating the package, packing method and LDO option. For details and availability, please consult Dialog Semiconductor’s customer support portal or your local sales representative. Table 11: Ordering Information Part Number Package Size (mm) Shipment Form Pack Quantity CCE4503 xx LDO DFN10 3 x 3 T&R 4000 Part Number Legend:

7 Application Information

The CCE4503 may need to be connected to some external components depending on the desired operating environment:

  • If an LDO is selected (5V or 3.3V), a 1 µF capacitor from VDD to L- must be provided by the customer
  • Outputs NERR and NWUP are open-drain outputs. Usually the internal pull-up resistors of the MCU can be used. If no pull-up resistors can be configured, the customer needs to connect external resistors.
  • A resistor RLIM may be used to set the overcurrent limit and slew rate. For maximum slew rate and overcurrent limit, the pin can be connected to VSS or left open. Figure 6: CCE4503 application

Datasheet Revision 2.3 23.07.2020 CFR0011-120-00 16 of 17 © 2020 Dialog Semiconductor

Revision History

2.3 23-Jul-2020 Changed Ordering Information 2.2 27-May-2020 Corrected Electrical Characteristics (Table 5 & 6) 2.1 26-May-2020 Corrected Electrical Characteristics (Table 6) Added Errata sheet note 2.0 20-Feb-2020 Initial version. Preliminary Status Definitions Revision Datasheet Status Product Status Definition 1.<n> Target Development This datasheet contains the design specifications for product development. Specifications may be changed in any manner without notice. 2.<n> Preliminary Qualification This datasheet contains the specifications and preliminary characterization data for products in pre-production. Specifications may be changed at any time without notice in order to improve the design. 3.<n> Final Production This datasheet contains the final specifications for products in volume production. The specifications may be changed at any time in order to improve the design, manufacturing and supply. Major specification changes are communicated via Customer Product Notifications. Datasheet changes are communicated via www.dialog- semiconductor.com. 4.<n> Obsolete Archived This datasheet contains the specifications for discontinued products. The information is provided for reference only.

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