CAS530M12BM3 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
- PDF pages: 5
Technical content
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FEATURES
- 175°Cmaximum junction temperature
- ZeroReverseRecovery fromDiodes
- 62mmhalfbridge module
APPLICATIONS
- MotorDrives
- VehicleFastChargers
- Renewable energy
- UPS AbsoluteMaximumRatings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage,G-SShort 1200 V VGSS Gate-SourceVoltage-Continuous D-SShort,ACfrequency≥1Hz,Note1 -10to22 V IDS DrainCurrent-Continuous TC =25℃ ,VGS =+15V 650 A IDS DrainCurrent-Continuous TC =90°C,VGS =+15V 500 A ISD Source-DrainCurrent(diode) TC =25℃,withONsignal 675 A ISD Source-DrainCurrent(diode) TC =90℃,withONsignal 520 A PD TotalDissipation@TC=25℃ 2300 W TJ Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -40~125 ℃ Viso IsolationVoltageRMS,f=50Hz,t=1min 4000 V
www.iscsemi.com 2 THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase(Diode) 0.075 ℃/W ELECTRICALCHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0,ID=0.6mA 1200 - - V IDSS ZeroGateVoltageDrainCurrent VDS=1200V,VGS=0 - 6 - uA IGSS Gate-BodyLeakageCurrent VGS=20V,VDS=0 - - 600 nA VGS(th) GateThresholdVoltage VDS=VGS,ID=210mA 1.8 2.7 - V RDS(on) Staticdrain-source On-stateresistance ID =540A,VGS =+15V,TJ =25°C - 3.5 - mΩ ID =540A,VGS =+15V,TJ=175°C - 5.0 - mΩ ID =540A,VGS =+18V,TJ =25°C - 2.9 - mΩ ID =540A,VGS =+18V,TJ=175°C - 4.3 - mΩ VDS(on) Staticdrain-source On-stateVoltage ID =540A,VGS =+15V,TJ =25°C - 1.89 - V ID =540A,VGS =+15V,TJ=175°C - 2.70 - V ID =540A,VGS =+18V,TJ =25°C - 1.57 - V ID =540A,VGS =+18V,TJ=175°C - 2.32 - V Ciss InputCapacitance VD =800V, VGS =0V, f=100kHz, VAC =25mV 34.9 - nF Coss OutputCapacitance 1.07 - nF Crss ReverseTransferCapacitance 86.5 - pF Qg TotalGateCharge VDD =800V, ID =540A, VGS =+15/-4V 1080 - nC
www.iscsemi.com 3 td(on) Turn-onDelayTime VDD =600V, ID =540A, RG =2.2Ω, VGS =+15/-4V Inductiveload switchingoperation - 78 - ns tr Turn-onRiseTime - 42 - td(off) Turn-offDelayTime - 173 - tf Turn-offFallTime - 47 - Eon Turn-onpowerdissipation 6.8 - mJ Eon Turn-offpowerdissipation 9.3 - Drain-SourceBodyDiodeCharacteristics VF DiodeForwardVoltage IF=540A,VGS=0V,TJ=25°C - 1.85 - V IF=540A,VGS=0V,TJ=150°C - 2.65 - trr ReverseRecoveryTime (Switchside) VCC=600V,IC=540A VGE=+15V/-4V Rgon/Rgoff=2.2Ω/2.2Ω (FRDside) Vrr=600V,IF=540A VGE=+15V/-4V Inductiveload switchingoperation - 28 - ns IRM PeakreverserecoveryCurrent - 312 - A Qrr PeakreverserecoveryCurrent - 6.9 - uC Err Reverserecoveredenergy - 2.0 - mJ MODULE PARAMETER CONDITIONS MIN TYP MAX UNIT Weight - - 300 - g Mountingtorqueformodulemounting M6 4 - 6 Nm
www.iscsemi.com 4 INTERNALCIRCUIT: PACKAGEOUTLINE(UNIT:mm)
www.iscsemi.com 5 PRODUCTDISCLAIMER ISCreserves the rights tomakechangesof thecontent hereinthe datasheetatany timewithout notification.The informationcontained hereinis presentedonly as aguidefortheapplications ofour products. ISCproducts are intendedforusagein generalelectronic equipment.Theproducts are notdesigned for usein equipmentwhichrequire specialized qualityand/or reliability,orin equipment whichcould have applications inhazardous environments,aerospaceindustry,or medicalfield.Pleasecontactusif you intend ourproducts tobe used inthese specialapplications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaimsany and allliability,includingwithout limitation special,consequential orincidental damages. Itis strictlyprohibitedto reprintorcopy partorallof thisdatasheetwithoutpermission fromISC.