2SC945 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc&iscsemi is registered trademark 1 isc Silicon NPN Transistor 2SC945
DESCRIPTION
- High Voltage
- Excellent hFE linearity
APPLICATIONS
- Dsigned for use in driver stage of AF amplifier and low speed switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 100 mA IB Base Current-Continuous 20 mA PC Collector Power Dissipation @TC=25℃ 250 mW TJ Junction Temperature 125 ℃ Tstg Storage Temperature Range -55~125 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc&iscsemi is registered trademark 2 isc Silicon NPN Transistor 2SC945
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MA X UNI T VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA ; IB= 10mA 0.15 0.3 V VBE(sat) Base-Emitter Saturation Voltage IC= 100mA ; IB= 10 mA 0.86 1.0 V VBE Base -Emitter Voltage IC= 1.0mA ; VCE= 6V 0.55 0.65 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 0.1 μ A IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.1 μ A hFE1 DC Current Gain IC= 0.1mA ; VCE= 6V 50 185 hFE2 DC Current Gain IC= 1.0mA ; VCE= 6V 90 200 600 fT Current-Gain—Bandwidth Product IC= 10mA; VCE= 6V; 150 250 450 MH z Cob Collector-Base Capacitance VCB=6V; IE=0; f=1.0MHz 3 4 pF NF Noise Figure IC= 0.1mA ; VCE= 6V,f=1kHz;RG=2kΩ 0.8 15 dB hFE2 Classifications R O P K 90-180 135-270 200-400 300-600