2SC6011A ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
iscWebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark1 iscSiliconNPNPowerTransistor 2SC6011/A
DESCRIPTION
- Collector-EmitterBreakdown Voltage- :V(BR)CEO=200V(Min)-2SC6011 =200V(Min)-2SC6011A
- GoodLinearity ofhFE
- ComplementtoType 2SA2151/A
- 100% avalanche tested
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- Designedforaudioandgeneral purposeapplications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 2SC6011 200 V 2SC6011A 230 VCEO Collector-Emitter Voltage 2SC6011 200 V 2SC6011A 230 VEBO Emitter-BaseVoltage 6 V IC CollectorCurrent-Continuous 15 A IB BaseCurrent-Continuous 4 A PC CollectorPowerDissipation @TC=25℃ 160 W TJ JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
iscWebsite：www.iscsemi.cn isc&iscsemiisregisteredtrademark2 iscSiliconNPNPowerTransistor 2SC6011/A ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter BreakdownVoltage 2SC6011 IC=50mA;IB=0 200 V 2SC6011A 230 VCE(sat) Collector-EmitterSaturationVoltage IC=5A;IB=0.5A 0.5 V ICBO Collector CutoffCurrent 2SC6011 VCB=200V;IE=0 10 μA 2SC6011A VCB=230V;IE=0 IEBO EmitterCutoffCurrent VEB=6V;IC=0 10 μA hFE DCCurrentGain IC=3A;VCE=4V 50 180 COB OutputCapacitance IE=0;VCB=10V;ftest=1.0MHz 270 pF fT Current-Gain—BandwidthProduct IE=-0.5A;VCE=12V 20 MHz hFE Classifications O P Y 50-100 70-140 90-180