2SC5480 HITACHI
Document overview
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Technical content
Features
- High breakdown voltage V CES = 1500 V
- Isolated package TO–3PFM
- Built-in damper diode Outline TO–3PFM 1.Base 2.Collector 3.Emitter1 2 C E B
Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to emitter voltage V CES 1500 V Emitter to base voltage V EBO 5V Collector current I C 14 A Collector peak current i c(peak) 28 A Collector power dissipation P C Note1 50 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Collector to emitter diode forward current ID 14 A Note: 1. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Emitter to base breakdown voltage V(BR)EBO 5 ——V I E = 500mA, IC = 0 Collector cutoff current ICES — — 500 mAV CE = 1500V, RBE = 0 DC current transfer ratio hFE1 5 — 25 V CE = 5 V, IC = 1A DC current transfer ratio hFE2 4— 7 V CE = 5 V, IC = 10A Collector to emitter saturation voltage VCE(sat) ——5 V I C = 10A, IB = 2.5A Base to emitter saturation voltage VBE(sat) — — 1.5 V I C = 10A, IB = 2.5A Collector to emitter diode forward voltage VECF ——2 V I F = 14A Fall time t f — 0.2 0.4 msI CP = 7A, IB1= 2.4A fH = 31.5kHz
05 1 0 0.1 0.2 0.5 1 25 20 100 Collector Power Dissipation Pc (W) Case Temperature Tc (°C) Collector Power Dissipation vs. Temperature Collector to Emitter Voltage V (V)CE Collector Current I (A)C Typical Output Characteristics DC Current Transfer Ratio hFE Collector Current I (A)C DC Current Transfer Ratio vs. Collector Current Collector Current I (A) Collector to Emitter Voltage V (V)CE C Area of Safe Operaion Tc = 25 °C 0.1 0.5 0.2 10 1000 5000 L = 180 µH I = –1 A duty < 1 % Tc = 25°C Tc = –25 °C25 °C 75 °C V = 5 VCE 0.8 A 1.4 A 1.2 A 1.0 A 0.6 A 0.4 A 0.2 A Pc = 50 W BI = 0
0.05 0.1 0.2 0.5 0.1 0.5 0.2 0.1 0.2 0.5 1 2 5 10 0.8 0.6 0.4 0.2 Collector to Emitter Saturation Voltage CE(sat)V (V) Collector Current I (A)C Collector to Emitter Saturation Voltage vs. Collector Current Collector Current I (A)C Base to Emitter Saturation Voltage V (V)BE(sat) Base to Emitter Saturation Voltage vs. Collector Current Base Current I (A)B Collector to Emitter Saturation Voltage V (V)CE(sat) Collector to Emitter Saturation Voltage vs. Base Current Fall Time t (µs)f Base Current I (A)B1 Fall Time vs. Base Current Tc = 25°C 7 A I = 5 AC 3.0 I / I = 4CB Tc = –25 °C 25 °C 75 °C I / I = 4C B Tc = –25°C 25 °C 75 °C 3.4 I = 7 A f = 31.5 kHz Tc = 25°C CP H 0.1 9 A
Package Dimensions (Unit: mm) 16.0 Max 5.8 Max
1.4 Max
2.6 4.0 1.6 2.7 5.0 3.2 f 3.2 5.0 – 0.3 0.66 0.9 Hitachi Code EIAJ JEDEC TO–3PFM +0.2 –0.1 +0.2 –0.1
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