2SC5448 HITACHI

Document overview

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Technical content

Features

  • High breakdown voltage V CBO = 1500 V
  • High speed switching tf = 0.15 µsec (typ.) at fH = 64 kHz
  • Isolated package TO –3PFM Outline TO–3PFM 1. Base 2. Collector 3. Emitter1 2

Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V CBO 1500 V Collector to emitter voltage V CEO 700 V Emitter to base voltage V EBO 6V Collector current I C 10 A Collector peak current i c(peak) 20 A Collector power dissipation P C Note1 50 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Collector to emitter breakdown voltage V(BR)CEO 700 ——V I C = 10mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 6— — V I E = 10mA, IC = 0 Collector cutoff current ICES — — 500 µAV CE = 1500V, RBE = 0 DC current transfer ratio hFE1 10 — 30 V CE = 5 V, IC = 1A DC current transfer ratio hFE2 3.5 — 6.5 V CE = 5 V, IC = 6A Collector to emitter saturation voltage VCE(sat) ——5 V I C = 6A, IB = 1.6A Base to emitter saturation voltage VBE(sat) — — 1.5 V I C = 6A, IB = 1.6A Fall time t f — 0.2 0.4 µsI CP = 5A, IB1 = 1.6A fH = 31.5kHz Fall time t f — 0.15 — µsI CP = 5A, IB1 = 1.3A fH = 64kHz

05 1 0 0.1 0.2 0.5 1 2 5 10 100 Collector Power Dissipation Pc (W) Case Temperature Tc (°C) Collector Power Dissipation vs. Temperature Collector to Emitter Voltage V (V)CE Collector Current I (A)C Typical Output Characteristics DC Current Transfer Ratio hFE Collector Current I (A)C DC Current Transfer Ratio vs. Collector Current Collector Current I (A) Collector to Emitter Voltage V (V)CE C Area of Safe Operaion BI = 0Tc = 25 °C 2.0 A 1.8 A 1.6 A 1.4 A 1.2 A 1.0 A 0.8 A 0.6 A 0.4 A 0.2 A Tc = –25 °C 25 °C 75 °C V = 5 VCE 0.1 0.5 0.2 10 1000 5000 L = 180 µH I = –1 A duty < 1 % Tc = 25°C Pc = 50 W

0.1 0.2 0.5 1 2 5 10 0.05 0.1 0.2 0.5 0.2 0.5 1 2 5 100.1 0.5 0.2 0.1 0.2 0.5 1 2 5 10 0.8 0.6 0.4 0.2 Collector to Emitter Saturation Voltage CE(sat)V (V) Collector Current I (A)C Collector to Emitter Saturation Voltage vs. Collector Current Collector Current I (A)C Base to Emitter Saturation Voltage V (V)BE(sat) Base to Emitter Saturation Voltage vs. Collector Current Base Current I (A)B Collector to Emitter Saturation Voltage V (V)CE(sat) Collector to Emitter Saturation Voltage vs. Base Current Fall Time t (µs)f Base Current I (A)B1 Fall Time vs. Base Current I / I = 4CB I / I = 4C B Tc = 25°C Tc = –25 °C 25 °C 75 °C Tc = –25°C 25 °C 75 °C 6 A 8 A I = 4 AC 2.4 I = 5 A f = 64 kHz Tc = 25°C CP H

Storage Time tstg (µs) Base Current I (A)B1 Storage Time vs. Base Current 2.4 I = 5 A f = 64 kHz Tc = 25°C CP H

Unit: mm 16.0 Max 5.8 Max

1.4 Max

2.6 4.0 1.6 2.7 5.0 3.2 φ 3.2 5.0 ± 0.3 0.66 0.9 Hitachi Code EIAJ JEDEC TO–3PFM +0.2 –0.1 +0.2 –0.1

When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div.

2000 Sierra Point Parkway

Brisbane, CA. 94005-1835 U S A Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Straße 3 D-85622 Feldkirchen München Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd.

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Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 Copyright © Hitachi, Ltd., 1997. All rights reserved. Printed in Japan.