2SC536 ETC
Document overview
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Technical content
2SC536 TRANSISTOR (NPN)
FEATURES
P CM: 400 mW (Tamb=25 ℃) Collector current I CM: 1 0 0 mA Collector-base voltage V (BR)CBO: 4 0 V Operating and storage junction temperature range T J, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X UNIT Collector-base breakdown voltage V(BR)CBO Ic=100µA, I E=0 40 V Collector-emitter breakdown voltage V(BR)CEO Ic=1mA, I B=0 30 V Emitter-Base breakdown voltage V(BR)EBO I E=100µA, IC=0 5 V Collector cut-off current ICBO V CB=35V, IE=0 1 µA Emitter cut-off current IEBO V EB=4V, IC=0 1 µA DC current gain hFE V CE=6V, IC=1mA 60 960 Collector-emitter saturation voltage VCE(sat) I C=50mA, IB=5mA 0.5 V Transition frequency fT V CE=6V, IC=1mA 100 MHz Collector output capacitance Cob V CE=6V, f=1MHz 3.5 pF CLASSIFICATION OF h FE Rank D E F G H Range 60-120 100-200 160-320 280-560 480-960 1 2 3 TO-92 1. EMITTER 2. COLLECTOR 3. BASE 2SC536 Http:// www.wej.cn E-mail:wej@yongerjia.com WEJ ELECTRONIC CO.