DATASHEET SEARCH SITE
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
TO – 92 1. EMITTER 2. COLLECTOR 3. BASE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC536 TRANSISTOR (NPN)
FEATURES
z General Purpose Amplifier Transistor MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (T a=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO I C= 0.1mA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO I E=0.1mA,IC=0 5 V Collector cut-off current ICBO V CB=35V,IE=0 1 μA Emitter cut-off current IEBO V EB=4V,IC=0 1 μA DC current gain hFE V CE=6V, IC=1mA 60 960 Collector-emitter saturation voltage VCE(sat) I C=50mA,IB=5mA 0.5 V Collector output capacitance Cob V CB=6V, f=1MHz 3.5 pF Transition frequency fT V CE=6V,IC=1mA 100 MHz CLASSIFICATION OF hFE RANK D E F G H RANGE 60-120 100-200 160-320 280-560 480-960 Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current 0.1 A PC Collector Power Dissipation 0.4 W RθJA Thermal Resistance From Junction To Ambient 312 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ www.cj-elec.com 1 C,Dec,2015
A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Φ 1.600 0.063 h 0.000 0.380 0.000 0.015 Symbol Dimensions In Millimeters Dimensions In Inches 1.270 TYP 0.050 TYP TO-92 Suggested Pad Lay out www.cj-elec.com 2 C ,Dec,2015
ZZZFMHOHFFRP3 C,Dec,2015