C4D20120D ISC

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
  • PDF pages: 3

Technical content

SiliconCarbideSchottkyDiode www.iscsemi.com

FEATURES

  • 1.2kVSchottkyRectifier
  • Zero ReverseRecovery Current
  • High-Frequency Operation

APPLICATIONS

  • BoostDiodes in PFCorDC/DCStages
  • AC/DCConverters
  • Switch ModePower Supply (SMPS)
  • Free Wheeling Diodesin Inverters Stages ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VRRM RepetitisvePeakReverseVoltage 1200 V IF ContinuousForwardCurrent Tc=25℃ 34×2 ATc=135℃ 16.5×2 Tc=157℃ 10×2 IFSM Non-RepetitiveForwardSurge Current Tc=25℃,tp=10ms,HalfSinePulse 71 A Tc=110℃,tp=10ms,HalfSinePulse 59.5 IFRM RepetitivePeakForwardSurge Current Tc=25℃,tp=10ms,HalfSinePulse 47 A Tc=110℃,tp=10ms,HalfSinePulse 31.5 Ptot PowerDissipation Tc=25℃ 176×2 W Tc=110℃ 76×2 W TJ JunctionTemperature -55~175 ℃ Tstg StorageTemperatureRange -55~135 ℃

SiliconCarbideSchottkyDiode www.iscsemi.com THERMALCHARACTERISTICS SYMBOL PARAMETER TYP UNIT Rthj-c Thermal Resistance,Junction to Case PerLeg 0.85 ℃/W PerDevice 0.43 ℃/W ELECTRICALCHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VF DiodeForwardVoltage V IR Reversecurrent uA PACKAGEOUTLINE(UNIT:mm):

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