2SC4927 HITACHI

Document overview

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Technical content

Features

  • High breakdown voltage V CES = 1500 V
  • Built-in damper diode type
  • Isolated package TO-3PFM Outline TO-3PFM 1. Base 2. Collector 3. Emitter ID 2 3

Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to emitter voltage V CES 1500 V Emitter to base voltage V EBO 6V Collector current I C 8A Collector peak current I C(peak) 9A Collector surge current I C(surge) 18 A Collector power dissipation P C * 50 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C C to E diode forward current I D 8A Note: 1. Value at TC = 25°C. Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Emitter to base breakdown voltage V(BR)EBO 6— — VI E = 500 mA, IC = 0 Collector cutoff current ICES — — 500 µA V CE = 1500 V, RBE = 0 DC current transfer ratio hFE ——2 5 —V CE = 5 V, IC = 1 A Collector to emitter saturation voltage VCE(sat) ——5 V I C = 6 A, IB = 1.2 A Base to emitter saturation voltage VBE(sat) — — 1.5 V I C = 6 A, IB = 1.2 A C to E diode forward voltage VECF — — 2.0 V I F = 8 A Fall time t f — — 0.5 µs I CP = 6 A, IB1 = 1.2 A, IB2 ≅ –2.4 A, fH = 31.5 kHz

Collector Power Dissipation Pc (W) 50 100 150 200 Case Temperature Tc (°C) Maximum Collector Power Dissipation Curve 400 800 1200 1600 2000 Collector Current I (A)C Collector to Emitter Voltage V (V) Area of Safe Operation CE (100 V, 18 A) (800 V, 4 A) 0.5 mA f = 15.75 kHz Ta = 25 °C For picture tube arcing 05 1 0 Collector to Emitter Voltage V (V) Typical Output Characteristics CE Collector Current I (A)C I = 0BTc = 25°C 0.2 A 0.6 A 0.4 A 1.4 A 0.8 A 1.0 A 1.2 A 1.6 A1.8 A 2.0 A

0.1 0.2 0.5 1 2 5 10 Collector Current I (A) DC Current Transfer Ratio vs. Collector Current C DC Current Transfer Ratio hFE 75°C 25°C Tc = –25°C V = 5 VCE 0.5 0.2 0.1 0.1 0.2 0.5 1 2 5 10 Collector Current I (A) Collector to Emitter Saturation Voltage vs. Collector Current C V (V)CE(sat) 0.05 Tc = –25°C 75°C 25°C I / I = 5CB Collector to Emitter Saturation Voltage

0.5 0.2 0.1 0.2 0.5 1 2 5 10 Collector Current I (A) Base to Emitter Saturation Voltage vs. Collector Current C V (V)BE(sat) I / I = 5C Base to Emitter Saturation Voltage Tc = –25°C 25°C75°C B 0.1 0.2 0.5 1 2 5 Base Current I (A) Collector to Emitter Saturation Voltage vs. Base Current B Collector to Emitter Saturation Voltage CE(sat)V (V) Tc = 25°C I = 4 AC 6 A 8 A

When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi’s permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user’s unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div.

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