2SC4236 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4236
DESCRIPTION
- Collector-Emitter Sustaining Voltage- : V CEO(SUS)= 800V(Min)
- Fast Switching speed
APPLICATIONS
- Color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 12 A IB B Base Current-Continuous 3 A IBM Base Current-Peak 6 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4236
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A B 1.5 V ICBO Collector Cutoff Current At rated Voltage 100 μA ICEO Collector Cutoff Current At rated Voltage 100 μA IEBO Emitter Cutoff Current At rated Voltage 100 μA hFE-1 DC Current Gain IC= 3A ; VCE= 5V 8 hFE-2 DC Current Gain IC= 1mA ; VCE= 5V 7 fT Current-Gain—Bandwidth Product IC= 0.6A ; VCE= 10V 8 MHz Switching times ton Turn-on Time 0.5 μs tstg Storage Time 3.5 μs tf Fall Time IC= 3A , IB1= 0.6A; IB2= -1.2A RL= 85Ω; VBB2= 4V 0.3 μs isc Website：www.iscsemi.cn 2
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4236 isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4236 isc Website：www.iscsemi.cn 4