2SC4115S JIANGSU

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

TO – 92S 1. EMITTER 2. COLLECTOR 3. BASE JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SC4115S TRANSISTOR (NPN)

FEATURES

CE(sat) z Excellent Current Gain C haracteristics. z Complements The 2SA1585S. MAXIMUM RATINGS (T a =25℃ unless otherwise noted) Symbol Paramete r Value Unit V CBO Collector-Base Voltage 40 V V CEO Collector-Emitter Voltage 20 V V EBO Emitter-Base Voltage 6 V I C Collector Current 3 A P C Collector Power Dissipation 300 mW R θJA Thermal Resistance From Junction To Ambient 417 ℃/W T j Junction Temperature 150 ℃ T stg Storage Temperature -55~+150 ℃ JC(T www.cj-elec.com 1www.cj-elec.com 1 32 /g48/g36/g53/g46/g44/g49/g42 Equivalent Circuit /g3 C4115S/g32/g39/g72/g89/g76/g70/g72/g3/g70/g82/g71/g72/g3 /g59/g59/g59/g32/g38/g82/g71/g72/g3

ORDERING INFORMATION

Part Number Package Packing Method Pack Quantity TO-92S Bulk TO-92S Tape 2SC4115S 2SC4115S-TA C4115 S SV F,Aug,2017 1000pcs/Bag 3000pcs/Box Solid dot = Green molding compound device, if none, the normal device

/g40/g47/g40/g38/g55/g53/g44/g38/g36/g47/g3/g38/g43/g36/g53/g36/g38/g55/g40/g53/g44/g54/g55/g44/g38/g54 aT =25 /g1071 unless otherwise specified www.cj-elec.com 2www.cj-elec.com F,Aug,2017 Parameter Symbol Test conditions Min Typ Max Unit Collecto r-base breakdown voltage V(BR)CB O I C=0 .05mA,IE=0 40 V Collecto r-emitter breakdown voltage V(BR)CE O IC=1mA,IB=0 20 V Emitter-ba se breakdown voltage V(BR )EBO I E=0 .05mA,IC=0 6 V Collecto r cut-off current ICBO V CB=30V ,IE=0 0.1 μA Emitter cut-off current IEBO V EB=5V ,IC=0 0.1 μA DC curr ent gain hFE V CE=2V , IC=100mA 120 560 Collecto r-emitter saturation voltage VCE(sa * I C=2A,IB=0.1 A 0.5 V Collecto r output capacitance Cob V CB=10V ,IE=0, f=1MHz 25 pF Tr ansition frequency fT V CE=2V,IC=0 .5A, f=100MHz 290 MHz *Pulse test CLASSIFICATION OF hFE RAN K Q R S RAN GE 120-270 180-390 270-560

0.1 1 10 100 1000 0 204 0 608 0 1 00 100 150 200 250 300 1 10 100 1000 100 1000 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.1 1 10 100 1000 200 400 600 800 1000 1200 0.1 1 10 100 1000 100 200 300 400 0123456 100 150 200 250 VCE=2V Ta=25℃ Ta=100 o C BASE-EM ITTER VOLTAGE VBE(mV) COLLECTOR CURRENT IC (mA IC — — VBE f=1MHz IE=0 / IC=0 Ta=25 o C REVERSE VOLT AGE V (V) CAPACITANCE C ( pF) VCB / VEBCob / Cib —— Cib Cob TRANS ITION FREQUENCY fT (MHz) COLLECTOR CURRENT IC (mA) VCE=2V Ta=25 o C IC fT — — 3000 VCE= 2V Ta=100 o C Ta=25 o C COLLECTOR CURRENT IC (mA) DC CURRENT GAIN hFE IChFE —— COLLECT OR POWER DISSIPATION Pc (W) AMBIENT TEMPERATURE Ta ( )℃ Pc — — Ta 3000 COLLECTOR CURRENT IC (mA) BASE-EMIT TER SATURATION VOLTAGE VBEsat (mV) Ta=25℃ Ta=100℃ β=20 ICVBE sat —— 3000 Ta=25℃ Ta=100℃ β=20 VCE sat — — IC COLLECTOR-EMITTER SATURATION VOLT AGE VCEs at (mV) COLLECTOR CURRENT IC (mA) CO MMON EMITTER Ta=25℃ 800uA 720uA 640uA 560uA 480uA 400uA 320uA 240uA 160uA IB=80uA COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) St atic Characteristic T ypical Characteristics www.cj-elec.com 3 A,Jun,2014www.cj-elec.com F,Aug,2017

imensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.420 1.620 0.056 0.064 A1 0.660 0.860 0.026 0.034 b 0.330 0.480 0.013 0.019 b1 0.400 0.510 0.016 0.020 c 0.330 0.510 0.013 0.020 D 3.900 4.100 0.154 0.161 D1 2.280 2.680 0.090 0.106 E 3.050 3.250 0.120 0.128 e 1.270 TYP. 0.050 TYP. e1 2.440 2.640 0.096 0.104 L 15.100 15.500 0.594 0.610 θ 45° TYP. 45° TYP. www.cj-elec.com 4 F,Aug,2017

www.cj-elec.com F,Aug,20175