C3M0021120K ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
www.iscsemi.com 2023-8-181
FEATURES
- HighBlockingVoltagewith LowOn-Resistance
- RDS(ON)=28.8mΩ@VGS=15VTj=25℃
- LowCapacitance
- AvalancheRuggedness
APPLICATIONS
- SolarInverters
- SwitchMode PowerSupplies
- HighVoltageDC-DC Converters
- BatteryChargers AbsoluteMaximumRatings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 1200 V VGSS,OP RecommendGateSourceVoltage -3/+18 V VGSS,MAX MavimumGateSource -5+22 V ID DrainCurrent-Continuous 100 A DrainCurrent-Continuous@Tc=100℃ 74 A IDM DrainCurrent-SinglePluse 200 A PD TotalDissipation@TC=25℃ 469 W TJ Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -40~175 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 0.32 ℃/W
www.iscsemi.com 2023-8-182 ELECTRICALCHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0V;ID=0.1mA 1200 -- -- V VGS(th) GateThresholdVoltage VDS =10V,ID =1mA 1.8 2.5 3.6 V VGS(th) GateThresholdVoltage VDS =10V,ID =1mA;TJ=175℃ -- 2.0 -- V RDS(ON) Drain-SourceOn-stageResistance VGS=15V;ID=50A -- 21 28.8 mΩ VGS=15V;ID=50A;TJ=175°C -- 38 -- IGSS GateSourceLeakageCurrent VGS=15V;VDS=0V -- 10 250 nA IDSS ZeroGateVoltageDrainCurrent VDS =1200V,VGS =0V -- 1 50 μA gfs Transconductance VDS =20V,ID =1mA 35 S gfs Transconductance VDS =20V,ID =1mA 33 RG Gateresistance VGS=25mV,f=1.0MHZ -- 1.5 -- Ω Ciss InputCapacitance VGS =0V, VDS =1000V, f=1.0MHz -- 3570 -- pFCoss OutputCapacitance -- 170 -- Crss ReverseTransferCapacitance -- 18 -- Qg TotalGateCharge VDD=800V, ID=40A, VGS=-3to+18V -- 168 -- nCQgs Gate-SourceCharge -- 35 -- Qgd Gate-DrainCharge -- 7.1 -- td(on) Turn-onDelayTime VDD =800V,ID =40A, RG =2.5Ω,VGS =-3to18V L=200uH -- 14 -- ns tr Turn-onRiseTime -- 13 -- td(off) Turn-offDelayTime -- 42.5 -- tf Turn-offFallTime -- 11 -- EON Turn-OnSwitchingEnergy VDD =800V,ID =40A, RG =2.5Ω,VGS =-3Vto18V L=200uH -- 223 -- uJ EOFF Turn-OffSwitchingEnergy -- 257 --
www.iscsemi.com 2023-8-183 DIODECHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT IS ContinuousDiodeForwardCurrent VGS=-3V;TC=25°C -- 80 -- A VSD DiodeForwardVoltage ISD=25A;VGS=0V;TC=25°C 4.6 -- -- V VSD DiodeForwardVoltage ISD=25A;VGS=0V;TC=175°C 4.2 -- -- V trr ReverseRecoveryTime ISD=40A dI/dt=400A/us, Vds=800V -- 50 -- ns Qrr ReverseRecoveryCharge -- 240 -- uC IRRM Reverserecoverycurrent -- 6.2 -- A PackageDimensions(UNIT:MM):
www.iscsemi.com 2023-8-184 PRODUCTDISCLAIMER ISCreserves the rights tomakechangesof thecontent hereinthe datasheetatany timewithout notification.The informationcontained hereinis presentedonly as aguidefortheapplications ofour products. ISCproducts are intendedforusagein generalelectronic equipment.Theproducts are notdesigned for usein equipmentwhichrequire specialized qualityand/or reliability,orin equipment whichcould have applications inhazardous environments,aerospaceindustry,or medicalfield.Pleasecontactusif you intend ourproducts tobe used inthese specialapplications. ISCmakes nowarranty orguarantee regardingthe suitabilityof its products foranyparticularpurpose, nordoes ISCassumeanyliability arisingfrom theapplication oruse ofanyproducts, and specifically disclaimsany and allliability,includingwithout limitation special,consequential orincidental damages.