2SC3751 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3751
DESCRIPTION
- High Breakdown Voltage and High Reliability
- High Switching Speed
- Wide Area of Safe Operation
APPLICATIONS
- Designed for switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T a=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 1.5 A ICM Collector Current-Pulse 5 A IB Base Current-Continuous 0.8 A PC Collector Power Dissipation @TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3751
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 1100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.75A; IB= 0.15A 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 0.75A; IB= 0.15A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Gain IC= 0.1A; VCE= 5V 10 40 hFE-2 DC Current Gain IC= 0.5A; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 15 MHz COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 35 pF Switching times ton Turn-on Time 0.5 μs tstg Storage Time 3.0 μs tf Fall Time IC= 1A, IB1= 0.2A; IB2= -0.4A; RL= 400Ω, VCC= 400V 0.3 μs hFE-1 Classifications K L M 10-20 15-30 20-40 isc Website：www.iscsemi.cn 2