2SC3306 ISC
Document overview
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Technical content
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3306
DESCRIPTION
- With TO-3P(I) package
- Collector-emitter sustaining voltage- V CEO(sus)=400V(Min)
- Fast switching times
APPLICATIONS
- Switching regulator and high voltage switching applications
- High speed DC-DC converter applications PINNING PIN DESCRIPTION
1 Base
2 Collector;connected to
3 Emitter
Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current-DC 10 A ICM Collector current-peak 15 A IB Base current 5 A PC Collector power dissipation TC=25℃ 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Fig.1 simplified outlin e (TO-3P(I)) and symbol
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3306 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage I C=10mA ,IB=0 400 V V(BR)CBO Collector-base breakdown voltage I C=1mA ,IE=0 500 V V(BR)EBO Emitter-base breakdown voltage I E=1mA ,IC=0 7 V VCEsat Collector-emitter saturation voltage I C=5A; IB=0.5A 1.5 V VBEsat Base-emitter saturation voltage I C=5A; IB=0.5A 2.0 V ICBO Collector cut-off current V CB=400V; IE=0 100 μA IEBO Emitter cut-off current V EB=7V; IC=0 1.0 mA hFE DC current gain I C=5A ; VCE=5V 10 Switching times tr Rise time 1.0 μs tstg Storage time 2.5 μs tf Fall time VCC=200V; IC=5.0A IB1=-IB2=0.5A;RL=40 Ω 1.0 μs
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3306 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3306