C30637 ETC1
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LTB y) Electro Planar PIN InGaAs Photodiodes Optics (30616, C30637, C30617 J ig Re or = 525] . mf Spectral response range - ; eS. eaten Merron 1100 to 1700 nm : 33 4 Aa ah @ Fast response time ers : es @ Available in a variety of convenient packages RCA’s new low capacitance, high speed InGaAs photodetectors offer improved passivation and contact technologies to provide lower dark current and noise with negligible series resistance. 200°C purging, extend- ed lifetest and periodic qualification programs assure high quality, reliable devices ideally suited for today's demanding electro-optics and communications industries, Absolute Maximum Ratings * canbe [anes aoe [Fowwardcument Te P| Total Power ra a a) Ambient Temper.: | T gy CER | -60 +125 | -60 +125 | -60 +125] °C . Storage E ~60 +125] °C EQC -40 +80 °c EFC . ~40 +80 ba 8 Operating T, CER | -40 +60 | -40 +80 | -40 +80] °C E -40 ” +80} °C EQC -40 +70} °C EFC -40 +70} °C Soldering (10s) | T,, (All) 250 250 250] °c } Those are limiting values of opersting and environmental conditions, Excooding those values can csuse damage to the device. a eeeeeSeSSSSS { RCA Inc., Electro Optics
OMI NOs VIVO L, GIVE TF 7 4b 53 A = Vy = , {| __caeeis_ [030637 ca087 [unis] Operating Voltage [Vr (all) Breskdown Voltage | Vb _all)| 20 so [200 Sst 20 SC«dSC(*d Responsivity at R,, CER | .80 86 80 86 80 86 A/W 1300 nm E 78 84 A/W EQC 73 +78 A/w EFC 73 79 A/W {meno mode fiber) EFC 62 68 A/W (guded indes titer) Responsivity at Riss CER |.85 90 85 90 85 90 AIW 1550 nm E 83 +88 AIW EQc 60 85 A/Ww EFC -80 85 A/w (mono mede fier) EFC 68 75 A/w (graded index fiber) Noise Current IL, {all) <.05 15 <.05 15 <.05 +15 |pA/H2! f = 10 kHz, . Af = 1.0 Hz) Capacitance c CER 5 .7 | pF E 8 1.0] pF EQC 38 1.0] pF EFC 8 1.0] pF Riso Time (10%-90%)|t, (all) a 5 Fall Time (90%-10%) | t; (all) a 5 Chip Photosensitive Surface Shape Circular Circular Circular Useful Area fall) 002 004 008 mm? Useful Diameter (all) 50 75 100 im Reliability and Quality Assurance: RCA has implemented several programs to assure the highest quality and reliability. These include: 1, 200°C Burn-In; All RCA InGaAs PIN photodiodes are subjected to 200°C at -10V bias for 16 hours to eliminate any weak units. 2. Lifetest: . Before a wafer is sourced for production, a sample lot is first tested at 200°C for 500 hours, ensuring a MTTF of at least 107 hours at 50°C (Ea = .7eV). Ex- tended lifetesting of random samples show that the typical MTTF at 50°C is greater than 10° hours. 3. Periodic Qualification: Process control is maintained by annual requalification testing of production samples, These tests include extensive electrical, thermal and mechanical stress as well as extended lifetest. Bra ss See mo] RCA Inc., Electro Optics