C2M0045170D ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
- PDF pages: 4
Technical content
www.iscsemi.com 1
FEATURES
- Highblocking voltagewith lowOn-Resistance
- HighSpeedSwitching with LowCapacitance
- EasytoParallelandSimple toDrive
APPLICATIONS
- SolarInverters
- SwitchMode PowerSupplies
- DC-DCConverters
- Motordrives AbsoluteMaximumRatings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 1700 V VGSS Gate-SourceOpetationVoltage -10/+25 V ID DrainCurrent-Continuous 75 A DrainCurrent-Continuous@Tc=100℃ 48 A IDM DrainCurrent-SinglePluse 160 A PD TotalDissipation@TC=25℃ 338 W TJ Max.OperatingJunctionTemperature -40~150 ℃ Tstg StorageTemperature -40~150 ℃ THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 0.37 ℃/W
www.iscsemi.com 2 ELECTRICALCHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0V,ID=0.1mA 1700 -- -- V VGS(th) GateThresholdVoltage VDS =10V,ID =18mA 2.0 -- 4.0 V RDS(ON) Drain-SourceOn-stageResistance VGS=20V,ID=50A -- 40 70 mΩ VGS=20V,ID=50A,TC=25℃ -- 80 -- IGSS GateSourceLeakageCurrent VGS=20V,VDS=0V -- -- 600 nA IDSS ZeroGateVoltageDrainCurrent VDS =1700V,VGS =0V -- 2 100 μA RG InternalGateResistance f=1MHz,VAC =25mV -- 1.3 -- Ω gfs Transconductance VDS=20V,IDS=50A -- 25 -- SVDS=20V,IDS=50A, Ciss InputCapacitance VGS =0V VDS =1200V, f=1.0MHz VAC=25mV -- 3455 -- pFCoss OutputCapacitance -- 171 -- Crss ReverseTransferCapacitance -- 7 -- Qg TotalGateCharge VDD=1200V ID=50A VGS=-5to+20V -- 43 -- nCQgs Gate-SourceCharge -- 74 -- Qgd Gate-DrainCharge -- 200 -- td(on) Turn-onDelayTime VGS=-5to+20V ID=50A VDS=400V Rg=2.5Ω inductiveload -- 68 -- ns tr Turn-onRiseTime -- 19 -- td(off) Turn-offDelayTime -- 35 -- tf Turn-offFallTime -- 19 -- Co(er) EffectiveOutputCapacitance (EnergyRelated) VGS =0V,VDS =0...1200V -- 188 -- pF Co(tr) EffectiveOutputCapacitance (TimeRelated) -- 255 --
www.iscsemi.com 3 SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT EON Turn-OnSwitchingEnergy (SiCDiodeFWD) VDS =1200V,VGS =-5/20V ID =50A,RG =2.5Ω,L=99μH TJ =150℃ usingSiCDiodeasFWD -- 2.5 -- mJ EOFF TurnOffSwitchingEnergy (SiCDiodeFWD) -- 1.4 -- EON Turn-OnSwitchingEnergy (SiCDiodeFWD) VDS =1200V,VGS =-5/20V ID =50A,RG =2.5Ω,L=99μH TJ =150℃ usingMOSFETDiodeasFWD -- 4.9 -- EOFF TurnOffSwitchingEnergy (SiCDiodeFWD) -- 1.1 -- SOURCE-DRAINBODYDIODE CHARACTERISTICS Drain-SourceBodyDiodeCharacteristics VSD DiodeForwardVoltage ISD=25A,VGS=-5V -- 3.8 -- V ISD=25A,VGS=-5V,TJ =150℃ -- 3.4 -- IS ContinuousDiodeForwardCurrent VGS =-5V,TC=25°C -- -- 76 A trr ReverseRecoveryTime VGS =-5V,ISD =50A VR =1200V dif/dt=1000A/µs TJ =150℃ -- 53 -- ns Qrr ReverseRecoveryCharge -- 461 -- uC Irrm PeakReverseRecoveryCurrent -- 14 -- A trr ReverseRecoveryTime VGS =-5V,ISD =50A VR =1200V dif/dt=3040A/µs TJ =150℃ -- 40 -- ns Qrr ReverseRecoveryCharge -- 481 -- uC Irrm PeakReverseRecoveryCurrent -- 22 -- A
www.iscsemi.com 4 PACKAGEDIMENSIONS(UNIT:mm): TO-247-3 PRODUCTDISCLAIMER ISCreserves the rights tomakechangesof thecontent hereinthe datasheetatany timewithout notification.The informationcontained hereinis presentedonly as aguidefortheapplications ofour products. ISCproducts are intendedforusagein generalelectronic equipment.Theproducts are notdesigned for usein equipmentwhichrequire specialized qualityand/or reliability,orin equipment whichcould have applications inhazardous environments,aerospaceindustry,or medicalfield.Pleasecontactusif you intend ourproducts tobe used inthese specialapplications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaimsany and allliability,includingwithout limitation special,consequential orincidental damages. Itis strictlyprohibitedto reprintorcopy partorallof thisdatasheetwithoutpermission fromISC.