C1906

2SC1906 HITACHI

Document overview

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Technical content

Silicon NPN Epitaxial Planar Application

• VHF amplifier
• Mixer, Local oscillator Outline 1. Emitter 2. Collector 3. Base TO-92 (2)

Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V CBO 30 V Collector to emitter voltage V CEO 19 V Emitter to base voltage V EBO 2V Collector current I C 50 mA Emitter current I E –50 mA Collector power dissipation P C 300 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 30 — — V I C = 10 mA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 19 — — V I C = 3 mA, RBE = ¥ Emitter to base breakdown voltage V(BR)EBO 2— — VI E = 10 mA, IC = 0 Collector cutoff current I CBO — — 0.5 mAV CB = 10 V, IE = 0 DC current transfer ratio hFE 40 — — V CE = 10 V, IC = 10 mA Gain bandwidth product f T 600 1000 — MHz V CE = 10 V, IC = 10 mA Collector output capacitance Cob — 1.0 2.0 pF V CB = 10 V, IE = 0, f = 1 MHz Collector to emitter saturation voltage VCE(sat) — 0.2 1.0 V I C = 20 mA, IB = 4 mA Base time constant r bb’ • C C —1 02 5p sV CB = 10 V, IC = 10 mA, f = 31.8 MHz Power gain PG — 33 — dB V CE = 10 V, IC = 5 mA f = 45 MHz — 18 — dB V CE = 10 V, IC = 5 mA f = 200 MHz

Ambient Temperature Ta (°C) Collector Power Dissipation PC (mW) Maximum Collector Dissipation Curve 100 150 0 Collector to Emitter Voltage VCE (V) Collector Current IC (mA) Typical Output Characteristics 12 16 20 IB = 20 µA P C = 300 mW 100 120 140 160 180 0.40.2 Base to Emitter Voltage VBE (V) Collector Current IC (mA) Typical Transfer Characteristics 0.6 0.8 1.0 VCE = 10 V 120 100 250.5 1.00.1 0.2 Collector Current IC (mA) DC Current Transfer Ratio hFE DC Current Transfer Ratio vs. Collector Current 10 20 50 100 VCE = 10 V

Collector to Emitter Voltage VCE (V) Collector Current IC (mA) Gain Bandwidth Product Curve 12 16 20 fT = 1,000 MHz 500 600 900 800700 200 600 400 1,200 1,000 800 31.00.1 0.3 Collector Current IC (mA) Gain Bandwidth Product fT (MHz) Gain Bandwidth Product vs. Collector Current 10 30 100 VCE = 10 V f = 100 MHz 200 100 0.1 0.2 0.5 1.0 Collector Current IC (mA) Base time Constant rbb'•CC (ps) Base Time Constant vs. Collector Currnt 25 1 0 VCB = 10 V f = 31.8 MHz 4682 Input Conductance gie (mS) Input Suceptance bie (mS) Input Admittance vs. Frequency 10 12 yie = gie+jbie VCE = 9 Vf = 25 MHz IC = 1 mA 2 mA 4 mA 8 mA 12 mA 100 200 250

0.4 0.6 0.80.2 Output Conductance goe (mS) Output Suceptance boe (mS) Output Admittance vs. Frequency 1.0 1.2 yoe = goe+jboe VCE = 9 V f = 25 MHz IC = 1 mA 100 200 250 12842 –1.6 –1.2 –0.8 –0.4 –2.0 Reverse Transfer Conductance g re (mS) Reverse Transfer Suceptance bre (mS) Reverse Transfer Admittance vs. Frequency yre = gre+jbre VCE = 9 V f = 25 MHz IC = 21 mA 100 200 250 8 4 2 1 –100 –40 –20 –120 Forward Transfer Conductance gfe (mS) Forward Transfer Suceptance bfe (mS) Forward Transfer Admittance vs. Frequency 100 120 140806020 400 yfe = gfe+jbfe VCE = 9 V f = 25 MHz IC = 1 mA 5080100 150 8200 –60 –80 0.1 0.20 Injection Voltage Vinj (V) Conversion Gain CG (dB) Conversion Gain vs. Local Oscillating Injection Voltage 0.3 VCB = 9 V IE = 3.5 mA fs = 200 MHz fosc = 245 MHz fIF = 45 MHz Emitter Inject

Emitter Current IE (mA) Conversion Gain CG (dB) Conversion Gain vs. Emitter Current VCB = 9 V Vinj = 150 mV fs = 200 MHz fosc = 245 MHz fIF = 45 MHz Emitter Inject

0.60 Max

0.45 – 0.1 5.0 – 0.2 0.7

2.3 Max

12.7 Min 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (2) Conforms Conforms 0.25 g Unit: mm

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