BZV85 series Voltage regulator diodes

Document overview

  • Manufacturer or author: NXP Semiconductors
  • PDF pages: 9

Technical content

Supersedes data of 1996 Apr 26

1999 May 11

dbook, halfpage M3D130

1999 May 11 2

NXP Semiconductors Product data sheet Voltage regulator diodes BZV85 series

FEATURES

  • Total power dissipation: max. 1.3 W
  • Tolerance series: approx. ±5%
  • Working voltage range: nom. 3.6 to 75 V (E24 range)
  • Non-repetitive peak reverse power dissipation: max. 60 W.

APPLICATIONS

  • Stabilization purposes.

DESCRIPTION

Medium-power voltage regulator diodes in hermetically sealed leaded glass SOD66 (DO-41) packages. The diodes are available in the normalized E24 approx. ±5% tolerance range. The series consists of 33 types with nominal working voltages from 3.6 to 75 V (BZV85-C3V6 to BZV85-C75). Fig.1 Simplified outline (SOD66; DO-41) and symbol. The diodes are type branded. handbook, halfpage MAM241 ka LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Notes 1. Device mounted on a printed circuit-board with 1 cm2 copper area per lead. 2. If the leads are kept at T tp = 55 °C at 4 mm from body.

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT IF continuous forward current − 500 mA IZSM non-repetitive peak reverse current tp = 100 μs; square wave; Tj = 25 °C prior to surge; see Fig.3 see Table “Per type” tp = 10 ms; half sinewave; Tj = 25 °C prior to surge see Table “Per type” Ptot total power dissipation Tamb = 25 °C; lead length 10 mm; note 1 − 1 W note 2 − 1.3 W PZSM non-repetitive peak reverse power dissipation tp = 100 μs; square wave; Tj = 25 °C prior to surge − 60 W Tstg storage temperature −65 +200 °C Tj junction temperature − 200 °C SYMBOL PARAMETER CONDITIONS MAX. UNIT VF forward voltage IF = 50 mA; see Fig.4 1 V

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NXP Semiconductors Product data sheet Voltage regulator diodes BZV85 seriesPer type Tj = 25 °C unless otherwise specified. BZV85- CXXX WORKING VOLTAGE VZ (V) at IZtest DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest TEMP. COEFF. SZ (mV/K) at IZtest see Figs 5 and 6 TEST CURRENT IZtest (mA) DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE NON-REPETITIVE PEAK REVERSE CURRENT IZSM IR (μA) VR (V) at tp = 100 μs; Tamb = 25 °C at tp = 10 ms; Tamb = 25 °C

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NXP Semiconductors Product data sheet Voltage regulator diodes BZV85 series BZV85- CXXX WORKING VOLTAGE VZ (V) at IZtest DIFFERENTIAL RESISTANCE rdif (Ω) at IZtest TEMP. COEFF. SZ (mV/K) at IZtest see Figs 5 and 6 TEST CURRENT IZtest (mA) DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE NON-REPETITIVE PEAK REVERSE CURRENT IZSM IR (μA) VR (V) at tp = 100 μs; Tamb = 25 °C at tp = 10 ms; Tamb = 25 °C

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NXP Semiconductors Product data sheet Voltage regulator diodes BZV85 series THERMAL CHARACTERISTICS Note 1. Device mounted on a printed circuit-board with 1 cm2 copper area per lead. GRAPHICAL DATA SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 4 mm; see Fig.2 110 K/W Rth j-a thermal resistance from junction to ambient lead length10 mm; note 1 175 K/W Fig.2 Thermal resistance from junction to tie-point with a lead length of 4 mm. handbook, full pagewidth 10−2 10−1 11 0 1 0 2 103 104 MBG929 102 103 tp (ms) tp tp T Tδ = δ = 1 0.02 0.01 0.75 0.50 0.33 0.20 0.10 0.05 Rth j-tp (K/W)

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NXP Semiconductors Product data sheet Voltage regulator diodes BZV85 series Fig.3 Non-repetitive peak reverse current as a function of the nominal working voltage. handbook, halfpage MBG802 102

10 V Znom (V)

(A) 11 0 2 10−1 (1) (2) (1) t p = 10 μs; half sinewave; Tamb = 25 °C. (2) t p = 10 ms; half sinewave; Tamb = 25 °C. Fig.4 Forward current as a function of forward voltage; typical values. handbook, halfpage 0 1.0 300 100 200 MBG925

0.5 VF (V)

(mA) (1) (2) (1) T j = 200 °C. (2) T j = 25 °C. Fig.5 Temperature coeffici ent as a function of working current; typical values. BZV85-C3V6 to C10. Tj = 25 to 150 °C. For types above 7.5 V the temperature coefficient is independent of current; see Table “Per type”. handbook, halfpage 05 0 MBG926

25 IZ (mA)

(mV/K) 4V7 4V3 3V6 3V9 9V1 8V2 7V5 6V8 6V2 5V6 5V1 Fig.6 Temperature coeffici ent as a function of nominal working voltage. handbook, halfpage100 102 MBG800 (mV/K) (2) (1) (3) IZ = IZtest; Tj = 25 to 150 °C. (1) Maximum values. (2) Typical values. (3) Minimum values.

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NXP Semiconductors Product data sheet Voltage regulator diodes BZV85 series PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ Note 1. The marking band indicates the cathode. SOD66 DO-41 97-06-20 Hermetically sealed glass package; axial leaded; 2 leads SOD66 UNIT b max. mm 0.81 D max. max. 284.82.6 L min. DIMENSIONS (mm are the original dimensions) G1LD L b (1) 0 2 4 mm scale k a

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NXP Semiconductors Product data sheet Voltage regulator diodes BZV85 series DATA SHEET STATUS Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes ⎯ NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale ⎯ NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license ⎯ Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control ⎯ This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Printed in The Netherlands 115002/00/02/pp9 Date of release: 1999 May 11 Document order number: 9397 750 05929