BYR29 PHILIPS
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
Philips Semiconductors Product specification Rectifier diodes BYR29 series ultrafast FEATURES SYMBOL QUICK REFERENCE DATA
- Low forward volt drop VR = 500 V/ 600 V/ 700 V /
- Fast switching 800 V
- Soft recovery characteristic
- Reverse surge capability VF ≤ 1.5 V
- High thermal cycling performance
- Low thermal resistance IF(AV) = 8 A trr ≤ 75 ns GENERAL DESCRIPTION PINNING SOD59 (TO220AC) Ultra-fast, epitaxial rectifier diodesPIN DESCRIPTION intended for use as output rectifiers in high frequency switched mode 1 cathode power supplies. 2 anode The BYR29 series is supplied in the conventional leaded SOD59 tab cathode (TO220AC) package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BYR29 -500 -600 -700 -800 VRRM Peak repetitive reverse voltage - 500 600 700 800 V VRWM Crest working reverse voltage - 500 600 700 800 V VR Continuous reverse voltage - 500 600 700 800 V IF(AV) Average forward current1 square wave; - 8 A δ = 0.5; Tmb ≤ 115 ˚C IFRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 16 A Tmb ≤ 115 ˚C IFSM Non-repetitive peak forward t = 10 ms - 60 A current t = 8.3 ms - 66 A sinusoidal; with reapplied V RRM(max) Tstg Storage temperature -40 150 ˚C Tj Operating junction temperature - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction to - - 2.5 K/W mounting base R th j-a Thermal resistance junction to in free air. - 60 - K/W ambient k a tab
1 Neglecting switching and reverse current losses
September 1998 1 Rev 1.300
Philips Semiconductors Product specification Rectifier diodes BYR29 series ultrafast
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage I F = 8 A; Tj = 150˚C - 1.07 1.50 V IF = 20 A - 1.75 1.95 V IR Reverse current V R = VRRM - 1.0 10 µA VR = VRRM ; Tj = 100 ˚C - 0.1 0.2 mA Q s Reverse recovery charge I F = 2 A to VR ≥ 30 V; - 150 200 nC dIF/dt = 20 A/µs trr Reverse recovery time I F = 1 A to VR ≥ 30 V; - 60 75 ns dIF/dt = 100 A/µs Irrm Peak reverse recovery current IF = 10 A to VR ≥ 30 V; - - 6 A dIF/dt = 50 A/µs; Tj = 100 ˚C Vfr Forward recovery voltage I F = 10 A; dIF/dt = 10 A/µs - 5.0 - V Fig.1. Definition of trr, Qs and Irrm Fig.2. Definition of Vfr Fig.3. Maximum forward dissipation PF = f(IF(AV)); square wave where IF(AV) =IF(RMS) x √D. Fig.4. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). Q s 100%10% time dI dt F I R IF I rrm trr 02468 1 0 1 20 D = 1.0 0.5 0.2 0.1 BYR29 IF(AV) / A PF / W Tmb(max) / C 150 137.5 125 100 112.5 Vo = 1.26 V Rs = 0.03 Ohms D = tp tp T T t I time time V F V fr V F IF 0123456780 a = 1.57 1.92.2 2.8 BYR29 IF(AV) / A PF / W Tmb(max) / C 150 130 140 120 Vo = 1.26 V Rs = 0.03 Ohms September 1998 2 Rev 1.300
Philips Semiconductors Product specification Rectifier diodes BYR29 series ultrafast Fig.5. Maximum trr at Tj = 25˚C and 100˚C. Fig.6. Maximum Irrm at Tj = 25˚C and 100˚C. Fig.7. Typical and maximum forward characteristic IF = f(VF); parameter Tj Fig.8. Maximum Qs at Tj = 25˚C Fig.9. Transient thermal impedance Zth = f(tp) trr / ns 11 0 100 1000 100 dIF/dt (A/us) IF=10 A Tj = 25 C Tj = 100 C 0 0.5 1 1.5 2 2.5 30 BYR29 VF / V IF / A maxtyp Tj = 25 C Tj = 150 C 0.1 0.01 Irrm / A 1 10 100 -dIF/dt (A/us) IF=1A IF=10A Tj = 25 C Tj = 100 C 1.0 10 100 -dIF/dt (A/us) 100
1000 Qs / nC
IF = 10A 1us 10us 100us 1ms 10ms 100ms 1s 10s0.001 0.01 0.1 BYV29pulse width, tp (s) Transient thermal impedance, Zth j-mb (K/W) D = tp tp T TP t D September 1998 3 Rev 1.300
Philips Semiconductors Product specification Rectifier diodes BYR29 series ultrafast MECHANICAL DATA Dimensions in mm Net Mass: 2 g Fig.10. SOD59 (TO220AC). pin 1 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". 10,3 max 3,7 2,8 3,0 3,0 max not tinned 1,3 max (2x) 2,4 0,6 4,5 max 5,9 min 15,8 max 1,3 0,9 max (2x) 13,5 min 5,08 September 1998 4 Rev 1.300
Philips Semiconductors Product specification Rectifier diodes BYR29 series ultrafast DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1998 5 Rev 1.300