BYD13 PHILIPS

Document overview

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Technical content

Product specification Supersedes data of April 1992

1996 May 24

Controlled avalanche rectifiers book, halfpage M3D119

1996 May 24 2

Philips Semiconductors Product specification Controlled avalanche rectifiers BYD13 series

FEATURES

  • Glass passivated
  • High maximum operating temperature
  • Low leakage current
  • Excellent stability
  • Guaranteed avalanche energy absorption capability
  • Available in ammo-pack.

DESCRIPTION

Cavity free cylindrical glass package through Implotec (1) technology. This package is hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched. (1) Implotec is a trademark of Philips. MARKING TYPE NUMBER MARKING CODE BYD13D 13D PH BYD13G 13G PH BYD13J 13J PH BYD13K 13K PH BYD13M 13M PH Fig.1 Simplified outline (SOD81) and symbol. handbook, 4 columns ak MAM123 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage BYD13D − 200 V BYD13G − 400 V BYD13J − 600 V BYD13K − 800 V BYD13M − 1000 V VRWM crest working reverse voltage BYD13D − 200 V BYD13G − 400 V BYD13J − 600 V BYD13K − 800 V BYD13M − 1000 V VR continuous reverse voltage BYD13D − 200 V BYD13G − 400 V BYD13J − 600 V BYD13K − 800 V BYD13M − 1000 V

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Philips Semiconductors Product specification Controlled avalanche rectifiers BYD13 series

ELECTRICAL CHARACTERISTICS

Tj=2 5°C; unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper≥40 µm, see Fig.9. For more information please refer to the“General Part of associated Handbook”. IF(AV) average forward current T tp=5 5°C; lead length = 10 mm; averaged over any 20 ms period; see Figs 2 and 4 − 1.40 A T amb =6 5°C; PCB mounting (see Fig.9); averaged over any 20 ms period; see Figs 3 and 4 − 0.75 A I FSM non-repetitive peak forward current t = 10 ms half sinewave; Tj=T j maxprior to surge; VR =V RRMmax − 20 A ERSM non-repetitive peak reverse avalanche energy L = 120 mH; Tj=T j max prior to surge; inductive load switched off − 7 mJ Tstg storage temperature −65 +175 °C Tj junction temperature see Fig.5 −65 +175 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage I F =1A ; Tj=T j max;see Fig.6 −− 0.93 V IF = 1 A; see Fig.6 −− 1.05 V V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA BYD13D 225 −− V BYD13G 450 −− V BYD13J 650 −− V BYD13K 900 −− V BYD13M 1100 −− V IR reverse current V R =V RRMmax ; see Fig.7 −− 1 µA VR =V RRMmax ; Tj= 165°C; see Fig.7 −− 100 µA trr reverse recovery time when switched from IF = 0.5 A to IR =1A ; measured at IR = 0.25 A; see Fig.10 − 3 − µs C d diode capacitance V R = 0 V; f = 1 MHz; see Fig.8 − 21 − pF SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point lead length = 10 mm 60 K/W R th j-a thermal resistance from junction to ambient note 1 120 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

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Philips Semiconductors Product specification Controlled avalanche rectifiers BYD13 series GRAPHICAL DATA Fig.2 Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage). a = 1.57; VR =V RRMmax ;δ = 0.5. Lead length 10 mm. handbook, halfpage 0 200 2.0 0.4 MBG039 0.8 1.2 1.6 40 80 120 160 IF(AV) (A) Ttp (oC) Fig.3 Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage). a = 1.57; VR =V RRMmax ;δ = 0.5. Device mounted as shown in Fig.9. handbook, halfpage 0 200 1.0 0.2 MBG055 0.4 0.6 0.8 40 80 120 160 IF(AV) (A) Tamb ( oC) Fig.4 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current. a=I F(RMS) /IF(AV); VR =V RRMmax ;δ = 0.5. handbook, halfpage 0 0.4 0.8 1.6 2.5 2.0 MGC741 1.2 1.5 1.0 0.5 2.5 2 P (W) IF(AV) (A) 1.42 a = 3 1.57 Solid line = VR . Dotted line = VRRM ;δ = 0.5. Fig.5 Maximum permissible junction temperature as a function of reverse voltage. handbook, halfpage DGJ KM 400 800 1200 200 100 150 MGC736 Tj VR , VRRM (V) ( C)o

1996 May 24 5

Philips Semiconductors Product specification Controlled avalanche rectifiers BYD13 series Solid line: Tj=2 5°C. Dotted line: Tj= 175°C. Fig.6 Forward current as a function of forward voltage; maximum values. handbook, halfpage MBG048 IF (A) VF (V) Fig.7 Reverse current as a function of junction temperature; maximum values. handbook, halfpage 2000 103 MGC739 102 16012040 80 (µA) IR Tj (oC) VR =V RRMmax . Fig.8 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj=2 5°C. handbook, halfpage MGC740 10 10 2 103 10 2 (pF) C d VR (V) Fig.9 Device mounted on a printed-circuit board. handbook, halfpage MGA200 Dimensions in mm.

1996 May 24 6

Philips Semiconductors Product specification Controlled avalanche rectifiers BYD13 series Fig.10 Test circuit and reverse recovery time waveform and definition. Input impedance oscilloscope: 1 MΩ , 22 pF; tr ≤ 7 ns. Source impedance: 50Ω ; tr ≤ 15 ns. handbook, full pagewidth 10 Ω 1 Ω 50 Ω 25 V DUT MAM057 trr 0.5 0.5 1.0 IF (A) IR (A) t 0.25

1996 May 24 7

Philips Semiconductors Product specification Controlled avalanche rectifiers BYD13 series PACKAGE OUTLINE DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification. Dimensions in mm. Fig.11 SOD81. handbook, full pagewidth MBC051 5 max 3.8 max28 min 28 min 0.81 max 2.15 max