BYC10B-600 PHILIPS

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Technical content

Philips Semiconductors Product specification Rectifier diode BYC10B-600 ultrafast, low switching loss FEATURES SYMBOL QUICK REFERENCE DATA

  • Extremely fast switching V R = 600 V
  • Low reverse recovery current
  • Low thermal resistance V F ≤ 1.8 V
  • Reduces switching losses in associated MOSFET I F(AV) = 10 A trr = 19 ns (typ) APPLICATIONS PINNING SOT404
  • Active power factor correction PIN DESCRIPTION
  • Half-bridge lighting ballasts
  • Half-bridge/ full-bridge switched 1 no connection mode power supplies. 2 cathode 1 The BYC10B-600 is supplied in the SOT404 surface mounting 3 anode package. tab cathode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V RRM Peak repetitive reverse voltage - 600 V VRWM Crest working reverse voltage - 600 V VR Continuous reverse voltage Tmb ≤ 114 ˚C - 500 V IF(AV) Average forward current δ = 0.5; with reapplied VRRM(max) ; - 10 A Tmb ≤ 78 ˚C1 IFRM Repetitive peak forward currentδ = 0.5; with reapplied VRRM(max) ; - 20 A Tmb ≤ 78 ˚C1 IFSM Non-repetitive peak forward t = 10 ms - 65 A current. t = 8.3 ms - 71 A sinusoidal; Tj = 150˚C prior to surge with reapplied VRWM(max) Tstg Storage temperature -40 150 ˚C Tj Operating junction temperature - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction to - - 2 K/W mounting base R th j-a Thermal resistance junction to minimum footprint, FR4 board - 50 - K/W ambient k a tab 3 tab 1 it is not possible to make connection to pin 2 of the SOT404 package September 1998 1 Rev 1.100

Philips Semiconductors Product specification Rectifier diode BYC10B-600 ultrafast, low switching loss

ELECTRICAL CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage I F = 10 A; Tj = 150˚C - 1.4 1.8 V IF = 20 A; Tj = 150˚C - 1.7 2.3 V IF = 10 A; - 2.0 2.8 V IR Reverse current V R = 600 V - 9 200 µA VR = 500 V; Tj = 100 ˚C - 1.1 3.0 mA trr Reverse recovery time I F = 10 A to VR = 400 V; - 19 - ns dIF/dt = 500 A/µs trr Reverse recovery time I F = 10 A to VR = 400 V; - 32 40 ns dIF/dt = 500 A/µs; Tj = 125˚C Irrm Peak reverse recovery current IF = 10 A to VR = 400 V; - 9.5 12 A dIF/dt = 500 A/µs; Tj = 125˚C Vfr Forward recovery voltage I F = 10 A; dIF/dt = 100 A/µs- 8 1 1 V Fig.1. Typical application, output rectifier in boost converter power factor correction circuit. Continuous conduction, mode where the transistor turns on whilst forward current is still flowing in the diode. Fig.2. Typical application, freewheeling diode in half bridge converter. Continuous conduction mode, where each transistor turns on whilst forward current is still flowing in the other bridge leg diode. Vin Vo = 400 V d.c.

500 V MOSFET

Vin Vin = 400 V d.c. inductive load IFIR IL September 1998 2 Rev 1.100

Philips Semiconductors Product specification Rectifier diode BYC10B-600 ultrafast, low switching loss Fig.3. Maximum forward dissipation as a function of average forward current; rectangular current waveform where IF(AV) =IF(RMS) x √D. Fig.4. Typical reverse recovery switching losses in diode, as a function of rate of change of current dIF/dt. Fig.5. Typical switching losses in transistor due to reverse recovery of diode, as a function of of change of current dIF/dt. Fig.6. Origin of switching losses in transistor due to diode reverse recovery. Fig.7. Typical reverse recovery time trr, as a function of rate of change of current dIF/dt. Fig.8. Typical peak reverse recovery current, Irrm as a function of rate of change of current dIF/dt. 0 5 10 15 0.5 0.2 0.1 BYC10-600 Rs = 0.05 Ohms Vo = 1.3 V D = 1.0 150 Average forward current, IF(AV) (A) Forward dissipation, PF (W) Tmb(max) C 140 130 120 110 100 D = tp tp T T t I time ID Irrm VD dIF/dt ID = IL losses due to diode reverse recovery 100 1000 0.05 0.1 0.15 0.2 0.25 Rate of change of current, dIF/dt (A/us) f = 20 kHz Diode reverse recovery switching losses, Pdsw (W) IF = 5 A 20 A 10 A Tj = 125 C VR = 400 V 100 1000

100 BYC10-600

Rate of change of current, dIF/dt (A/us) Reverse recovery time, trr (ns) Tj = 125 C VR = 400 V IF = 5 A 20 A 10 A 100 1000 BYC10-600 Rate of change of current, dIF/dt (A/us) Transistor losses due to diode reverse recovery, Ptsw (W) IF = 5 A 10 A 20 A f = 20 kHz Tj = 125 C VR = 400 V 100 1000 Rate of change of current, dIF/dt (A/us) Peak reverse recovery current, Irrm (A) Tj = 125 C VR = 400 V IF = 5 A 20 A September 1998 3 Rev 1.100

Philips Semiconductors Product specification Rectifier diode BYC10B-600 ultrafast, low switching loss Fig.9. Definition of reverse recovery parameters trr, Irrm Fig.10. Typical forward recovery voltage, Vfr as a function of rate of change of current dIF/dt. Fig.11. Definition of forward recovery voltage Vfr Fig.12. Typical and maximum forward characteristic IF = f(VF); Tj = 25˚C and 150˚C. Fig.13. Typical reverse leakage current as a function of reverse voltage. IR = f(VR ); parameter Tj Fig.14. Maximum thermal impedance Zth j-mb as a function of pulse width. Q s 100%10% time dI dt F I R IF I rrm trr 01234 BYC10-600 Forward voltage, VF (V) Forward current, IF (A) maxtyp Tj = 25 C Tj = 150 C 0 50 100 150 200

20 BYC10-600

Tj = 25 C Rate of change of current, dIF/dt (A/ s) Peak forward recovery voltage, Vfr (V) typ IF = 10 A 0 100 200 300 400 500 600 BYC10-600 1uA 10uA 100uA 1mA 10mA 100mA Reverse leakage current (A) Reverse voltage (V) Tj = 125 C 100 C 75 C 50 C 25 C time time V F V fr V F IF 1us 10us 100us 1ms 10ms 100ms 1s 10s0.001 0.01 0.1 BYV79Epulse width, tp (s) Transient thermal impedance, Zth j-mb (K/W) D = tp tp T TP t D September 1998 4 Rev 1.100

Philips Semiconductors Product specification Rectifier diode BYC10B-600 ultrafast, low switching loss MECHANICAL DATA Dimensions in mm Net Mass: 1.4 g Fig.15. SOT404 : centre pin connected to mounting base. MOUNTING INSTRUCTIONS Dimensions in mm Fig.16. SOT404 : soldering pattern for surface mounting. Notes 1. Epoxy meets UL94 V0 at 1/8". 11 max 4.5 max 1.4 max 10.3 max 0.5 15.4 2.5 0.85 max (x2) 2.54 (x2) 17.5 11.5 9.0 5.08 3.8 2.0 September 1998 5 Rev 1.100

Philips Semiconductors Product specification Rectifier diode BYC10B-600 ultrafast, low switching loss DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1998 6 Rev 1.100