BYC10-600CT PHILIPS

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Technical content

Philips Semiconductors Product specification Rectifier diode BYC10-600CT ultrafast, low switching loss FEATURES SYMBOL QUICK REFERENCE DATA

  • Dual diode VR = 600 V
  • Extremely fast switching
  • Low reverse recovery current V F ≤ 1.75 V
  • Low thermal resistance
  • Reduces switching losses in I O(AV) = 10 A associated MOSFET trr = 19 ns (typ) APPLICATIONS PINNING SOT78 (TO220AB)
  • Active power factor correction PIN DESCRIPTION
  • Half-bridge lighting ballasts
  • Half-bridge/ full-bridge switched 1 anode 1 mode power supplies. 2 cathode The BYC10-600CT is supplied in the SOT78 (TO220AB) 3 anode 2 conventional leaded package. tab cathode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V RRM Peak repetitive reverse voltage - 600 V VRWM Crest working reverse voltage - 600 V VR Continuous reverse voltage Tmb ≤ 110 ˚C - 500 V IO(AV) Average output current (bothδ = 0.5; with reapplied VRRM(max) ; - 10 A diodes conducting) T mb ≤ 50 ˚C1 IFRM Repetitive peak forward currentδ = 0.5; with reapplied VRRM(max) ; - 10 A per diode T mb ≤ 50 ˚C1 IFSM Non-repetitive peak forward t = 10 ms - 40 A current per diode t = 8.3 ms - 44 A sinusoidal; Tj = 150˚C prior to surge with reapplied VRWM(max) Tstg Storage temperature -40 150 ˚C Tj Operating junction temperature - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction to per diode - - 2.5 K/W mounting base both diodes - - 2.2 K/W R th j-a Thermal resistance junction to in free air. - 60 - K/W ambient k a1 a2 12 3 tab

1 Tmb(max) limited by thermal runaway

October 1999 1 Rev 1.000

Philips Semiconductors Product specification Rectifier diode BYC10-600CT ultrafast, low switching loss

ELECTRICAL CHARACTERISTICS

Tj = 25 ˚C, per diode unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage I F = 5 A; Tj = 150˚C - 1.4 1.75 V IF = 10 A; Tj = 150˚C - 1.75 2.2 V IF = 5 A; - 2.0 2.8 V IR Reverse current V R = 600 V - 9 100 µA VR = 500 V; Tj = 100 ˚C - 0.9 3.0 mA trr Reverse recovery time I F = 1 A; VR = 30 V; dIF/dt = 50 A/µs - 30 50 ns trr Reverse recovery time I F = 5 A; VR = 400 V; - 19 - ns dIF/dt = 500 A/µs trr Reverse recovery time I F = 5 A; VR = 400 V; - 25 30 ns dIF/dt = 500 A/µs; Tj = 125˚C Irrm Peak reverse recovery current IF = 5 A; VR = 400 V; - 0.7 3 A dIF/dt = 50 A/µs; Tj = 125˚C Irrm Peak reverse recovery current IF = 5 A; VR = 400 V; - 8 11 A dIF/dt = 500 A/µs; Tj = 125˚C Vfr Forward recovery voltage I F = 10 A; dIF/dt = 100 A/µs- 9 1 1 V Fig.1. Typical application, output rectifier in boost converter power factor correction circuit. Continuous conduction mode, where the transistor turns on whilst forward current is still flowing in the diode. Fig.2. Typical application, freewheeling diode in half bridge converter. Continuous conduction mode, where each transistor turns on whilst forward current is still flowing in the other bridge leg diode. Vin Vo = 400 V d.c.

500 V MOSFET

Vin Vin = 400 V d.c. inductive load IFIR IL October 1999 2 Rev 1.000

Philips Semiconductors Product specification Rectifier diode BYC10-600CT ultrafast, low switching loss Fig.3. Maximum forward dissipation per diode as a function of average forward current; rectangular current waveform where IF(AV) =IF(RMS) x √D. Fig.4. Typical reverse recovery switching losses per diode, as a function of rate of change of current dIF/dt. Fig.5. Typical switching losses in transistor due to reverse recovery of diode, as a function of of change of current dIF/dt. Fig.6. Origin of switching losses in transistor due to diode reverse recovery. Fig.7. Typical reverse recovery time trr, per diode as a function of rate of change of current dIF/dt. Fig.8. Typical peak reverse recovery current per diode, Irrm as a function of rate of change of current dIF/dt. 012345678 D = 1.0 0.5 0.2 0.1 BYC5-600 Rs = 0.09 Ohms Vo = 1.3 V 150 137.5 125 112.5 Average forward current, IF(AV) (A) Forward dissipation, PF (W) Tmb(max) C D = tp tp T T t I time ID Irrm VD dIF/dt ID = IL losses due to diode reverse recovery 100 1000 0.05 0.1 0.15 0.2 BYC5-600 f = 20 kHz Rate of change of current, dIF/dt (A/us) Diode reverse recovery switching losses, Pdsw (W) IF = 5 A 10 A 7.5 A Tj = 125 C VR = 400 V 100 1000

100 BYC5-600

Rate of change of current, dIF/dt (A/us) Reverse recovery time, trr (ns) 10 A 7.5 A IF = 5 A Tj = 125 C VR = 400 V 100 1000 BYC5-600 Rate of change of current, dIF/dt (A/us) Transistor losses due to diode reverse recovery, Ptsw (W) f = 20 kHz Tj = 125 C VR = 400 V IF = 5 A 7.5 A 10 A 100 1000 Rate of change of current, dIF/dt (A/us) Peak reverse recovery current, Irrm (A) Tj = 125 C VR = 400 V IF = 5 A 10 A October 1999 3 Rev 1.000

Philips Semiconductors Product specification Rectifier diode BYC10-600CT ultrafast, low switching loss Fig.9. Definition of reverse recovery parameters trr, Irrm Fig.10. Typical forward recovery voltage per diode, Vfr as a function of rate of change of current dIF/dt. Fig.11. Definition of forward recovery voltage Vfr Fig.12. Typical and maximum forward characteristic per diode, IF = f(VF); Tj = 25˚C and 150˚C. Fig.13. Typical reverse leakage current per diode as a function of reverse voltage. IR = f(VR ); parameter Tj Fig.14. Maximum thermal impedance per diode, Zth j-mb as a function of pulse width. Q s 100%10% time dI dt F I R IF I rrm trr 01234 BYC5-600 Forward voltage, VF (V) Forward current, IF (A) maxtyp Tj = 25 C Tj = 150 C 0 50 100 150 200

20 BYC5-600

Tj = 25 C Rate of change of current, dIF/dt (A/ s) Peak forward recovery voltage, Vfr (V) typ IF = 10 A 0 100 200 300 400 500 600 1uA 10uA 100uA 1mA 10mA 100mA BYC5-600 Reverse voltage (V) Reverse leakage current (A) Tj = 125 C 100 C 75 C 50 C 25 C time time V F V fr V F IF 1us 10us 100us 1ms 10ms 100ms 1s 10s0.001 0.01 0.1 BYV29pulse width, tp (s) Transient thermal impedance, Zth j-mb (K/W) D = tp tp T TP t D October 1999 4 Rev 1.000

Philips Semiconductors Product specification Rectifier diode BYC10-600CT ultrafast, low switching loss MECHANICAL DATA Dimensions in mm Net Mass: 2 g Fig.15. SOT78 (TO220AB); pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8". 10,3 max 3,7 2,8 3,03,0 max not tinned 1,3 max (2x) 123 2,4 0,6 4,5 max 5,9 min 15,8 max 1,3 2,54 2,54 0,9 max (3x) 13,5 min October 1999 5 Rev 1.000

Philips Semiconductors Product specification Rectifier diode BYC10-600CT ultrafast, low switching loss DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1999 6 Rev 1.000