BUK9610-55A

3 manufacturer specifications

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

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Manufacturer	Series	Package	Documents	Available	Select specification
Inchange Semiconductor ...	-	-	1	PDF HTML	View spec
Nexperia B.V. All right...	-	-	1	PDF HTML	View spec
NXP Semiconductors	-	-	1	PDF HTML	Viewing

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Summary

TrenchMOS logic level FET Rev. 01-20 August 2001

Description

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.

Source title BUK9610-55A Datasheet(PDF) - NXP Semiconductors

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