BUK7506-55B

2 manufacturer specifications

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

Request Quote

Manufacturer Specifications

Compare BUK7506-55B variants.

Select a manufacturer to view its specifications, local PDF, and searchable HTML text.

2 manufacturers / 2 documents

Manufacturer	Series	Package	Documents	Available	Select specification
Nexperia B.V. All right...	-	-	1	PDF HTML	View spec
NXP Semiconductors	-	-	1	PDF HTML	Viewing

Selected Specification

Overview

BUK7506-55B is listed in the IC category. Available datasheets include documents from NXP Semiconductors.

Summary

TrenchMOS standard level FET Rev. 01-31 March 2003

Description

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.

Source title BUK7506-55B Datasheet(PDF) - NXP Semiconductors

Related Parts

Browse manufacturer