BTX18 ETC

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BTX18-100/BTX18-200/BTX18-300 BTX18-400/BTX18-500 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Anode to Cathode - Ratings Voltage 1) Symbol Ratings BTX18- 100 BTX18- 200 BTX18- 300 BTX18- 400 BTX18- 500 VR Continuous Reverse Voltage 100 200 300 400 500 V VRWM Crest Working Reverse Voltage 100 200 300 400 500 V VRRM Repetitive Peak Reverse Voltage (δ = 0.01 ; f=50Hz) 120 240 350 500 600 V VRSM Non-repetitive peak reverse voltage (t<10ms) 120 240 350 500 600 V VDWM Crest Working off-state Voltage 100 200 300 400 500 V VD Continuous off-state Voltage 100 200 300 400 500 V VDRM Repetitive peak off-state voltage (δ = 0.01 ; f=50Hz) 120 240 350 500 600 V²) VDSM Non-repetitive peak off-state voltage (t<10ms) 120 240 350 500 600 V²) Currents Symbol Ratings BTX18- 100 BTX18- 200 BTX18- 300 BTX18- 400 BTX18- 500 TCASE=105°C Max : 1.0 A IT(AV) Average on-state current (averaged over any 20 ms period) T AMB=60°C, in free air Max : 250 mA IT On-state Current (D.C.) T CASE=100°C Max : 1.6 A IT(RMS) RMS on-state Current Max : 1.6 A SILICON THYRISTORS The BTX18 series is a range of p-gate reverse blocking thyristors, in a TO-39 metal enveloppe, intended for use in general low power applications up to a A average on-state current.

BTX18-100/BTX18-200/BTX18-300 BTX18-400/BTX18-500 Symbol Ratings BTX18- 100 BTX18- 200 BTX18- 300 BTX18- 400 BTX18- 500 ITRM Repetitive Peak on-state Current Max : 10 A ITSM Non-repetitive peak on-state current t=10ms ; TJ=125°C prior to surge 10 A V TJ Tstg Junction Temperature Storage Temperature Max : 125°C -55 to +125°C °C 1) These ratings apply for zero or negative bias on the gate with respect to the cathode, and when a resistor R<1 kΩ is connected between gate and cathode 2) The device is not suitable for operation in the forward breakover mode. Gate to Cathode - Ratings With 1ΩΩΩΩ resistor between gate and cathode Symbol Ratings BTX18 -100 BTX18 -200 BTX18 -300 BTX18 -400 BTX18 -500 VFGM Forward Peak Voltage Max : 10 V V VRGM Reverse Peak Voltage Max : 5 V V IFGM Forward Peak Current Max : 0.2 A PG(AV) Average Power Dissipation (averaged over any 20 ms period) Max : 0.05 W PGM Peak Power Dissipation Max : 0.5 W Temperatures Symbol Ratings BTX18 -100 BTX18 -200 BTX18 -300 BTX18 -400 BTX18 -500 Rth j-c From Junction to Case 10 °C/W Rth j-a From Junction to Ambient 200 °C/W Zth j-c Transient Thermal Resistance (t=10 ms) 2.5 °C/W Anode to Cathode - Characteristics Symbol Ratings BTX18 -100 BTX18 -200 BTX18 -300 BTX18 -400 BTX18 -500 VT On State Voltage

BTX18-100/BTX18-200/BTX18-300 BTX18-400/BTX18-500 Symbol Ratings BTX18 -100 BTX18 -200 BTX18 -300 BTX18 -400 BTX18 -500 IRM Peak Reverse Current VRM=VRWmax ; Tj=125°C < 800 400 275 200 160 µA IDM Peak off-state Current VDM=VDWmax ; Tj=125°C < 800 400 275 200 160 µA IL Latching current, Tj=125°C Typ : 10 mA IH Holding Current ; Tj=25°C < 5.0 ²) mA Gate to Cathode – Characteristics Symbol Ratings BTX18 -100 BTX18 -200 BTX18 -300 BTX18 -400 BTX18 -500 VGT Voltage that will trigger all devices Tj=25°C >2 . 0V VGD Voltage that will not trigger any device Tj=125°C < 200 mV IGT Current that vill trigger all devices Tj=25°C >5 . 0 m A Switching Characteristics Symbol Ratings BTX18 -100 BTX18 -200 BTX18 -300 BTX18 -400 BTX18 -500 Tj=25°C Type : 20 Turn off time when switched from IT=300 mA to IR=175 mA Tj=125°C tq Typ : 35 µs IDM Peak off-state Current VDM=VDWmax ; Tj=125°C < 800 400 275 200 160 µs 1) VT is measured along the leads at 1 cm from the case 2) Measurer under the following conditiond : Anode sypply voltage= +6.0V Initial on-state current after gate triggering= 50mA The current is reduced until the device turns of.

BTX18-100/BTX18-200/BTX18-300 BTX18-400/BTX18-500 MECHANICAL DATA CASE TO-39 DIMENSIONS mm inches A 6,71 0,26 B 13,2 0,51 C 9,23 0,36 D 8,34 0,32 E 0,8 0,03 F 0,8 0,03 G 0,42 0,016 H 45° L 4,97 0,2 Pin 1 : Kathode Pin 2 : Gate Pin 3 : Anode