BTW69-800RG ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark iscThyristors BTW69-800RG
DESCRIPTION
- WithTO-3Ppackaging
- Highcommutationcapability
- MinimumLot-to-Lotvariations forrobustdevice performance andreliable operation
APPLICATIONS
- Switching applications
- Batterycharging system
- Uninterruptiblepower supply
- Variable speedmotordrive
- Industrialweldingsystems
- BypassACswitch ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitivepeak off-state voltage 800 V VRRM Repetitivepeak reversevoltage 800 V IT(RSM) Averageon-state current @Tc=102℃ 50 A ITSM Surge non-repetitiveon-state current 50Hz 60Hz 580 610 A PG(AV) Averagegate power dissipation(overany 20msperiod )@Tc=125℃ 1 W Tj Operatingjunction temperature -40~125 ℃ Tstg Storagetemperature -40~150 ℃ ELECTRICALCHARACTERISTICS (TC=25℃ unless otherwisespecified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitivepeak reversecurrent VR=VRRM Rated; VD=VDRM Rated; Tj=25℃ Tj=125℃ μA mAIDRM Repetitivepeak off-state current VTM On-state voltage IT=100A;tP=380μs 1.9 V IGT Gate-triggercurrent VD =12V;RL=33Ω 80 mA VGT Gate-triggervoltage VD =12V;RL=33Ω 1.3 V Rth (j-c) Junctiontocase ForAC 0.9 ℃/W