BTW69-1200 ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
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Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark iscThyristors BTW69-1200
APPLICATIONS
- Availablein highpower packages, BTW69Series issuitable in applicationswhere power handlingandpower dissipation arecritical, suchas solidstaterelays,welding equipment,high powermotor
- MinimumLot-to-Lotvariations forrobustdevice performanceand reliableoperation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peakoff-state voltage 1200 V VRRM Repetitive peakreverse voltage 1200 V IT(AV) Average on-stage current,Tc=70°C 31 A IT(RMS) RMS on-statecurrent Tc=70°C 50 A ITSM Surge non-repetitiveon-state current TP=10ms 500 A PG(AV) Average gatepower dissipation 1 W Tj Operating junctiontemperature -40~125 ℃ Tstg Storage temperature -40~150 ℃ ELECTRICALCHARACTERISTICS (TC=25℃ unless otherwisespecified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peakreverse current VRM=VRRM Tj=25℃ 10 μA Tj=125℃ 5 mA IDRM Repetitive peakoff-state current VDM=VDRM Tj=25℃ 10 μA Tj=125℃ 5 mA VTM On-state voltage ITM=100A 1.6 V IGT Gate-triggercurrent VD =12 V;RL=33Ω 50 mA VGT Gate-triggervoltage VD =12 V;RL=33Ω 1.3 V Rth(j-c) Thermalresistance Junctionto case 0.45 ℃/W