BTN3904N3 CYSTEKEC

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Technical content

CYStech Electronics Corp. Spec. No. : C228N3-H Issued Date : 2002.05.11 Revised Date : 2005.01.12 Page No. : 1/4 BTN3904N3 CYStek Product Specification General Purpose NPN Epitaxial Planar Transistor BTN3904N3

Description

  • The BTN3904N3 is designed for general purpose switching amplifier applications.
  • Complementary to BTP3906N3. Symbol Outline Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-Base V oltage V CBO 60 V Collector-Emitter V oltage V CEO 40 V Emitter-Base V oltage V EBO 6 V Collector Current I C 200 mA Power Dissipation (TA=25°C) PD 225 (Note) mW Power Dissipation (TC=25°C) PD 560 mW Thermal Resistance, Junction to Ambient R θJA 556 (Note) °C/W Thermal Resistance, Junction to Case R θJC 223 °C/W Junction Temperature T j 150 °C Storage Temperature Tstg -55~+150 °C Note : Free air condition BTN3904N3 SOT-23 B：Base C：Collector E：Emitter

CYStech Electronics Corp. Spec. No. : C228N3-H Issued Date : 2002.05.11 Revised Date : 2005.01.12 Page No. : 2/4 BTN3904N3 CYStek Product Specification Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 60 - - V I C=10µA BVCEO 40 - - V I C=1mA BVEBO 6 - - V I E=10µA ICEX - - 50 nA V CE=30V , VBE=-3V *VCE(sat)1 - 0.1 0.2 V I C=10mA, IB=1mA *VCE(sat)2 - 0.15 0.3 V I C=50mA, IB=5mA *VBE(sat)1 0.65 0.75 0.85 V I C=10mA, IB=1mA *VBE(sat)2 - 0.85 0.95 V I C=50mA, IB=5mA *hFE1 40 - - V CE=1V , IC=100µA *hFE2 70 - - V CE=1V , IC=1mA *hFE3 100 - 300 V CE=1V , IC=10mA *hFE4 60 - - V CE=1V , IC=50mA *hFE5 30 - - V CE=1V , IC=100mA fT 300 - - MHz V CE=20V , IC=10mA, f=100MHz Cob - - 4 pF V CB=5V , IE=0A,f=1MHz *Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2% Characteristic Curves Current Gain vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current ---IC(mA) Current Gain---HFE HFE@VCE=1V Saturation Voltage vs Collector Current 100 1000 0.1 1 10 100 1000 Collector Current---IC(mA) Saturation Voltage-(mV) VCE(SAT)@IC=10IB

CYStech Electronics Corp. Spec. No. : C228N3-H Issued Date : 2002.05.11 Revised Date : 2005.01.12 Page No. : 3/4 BTN3904N3 CYStek Product Specification Saturation Voltage vs Collector Current 100 1000 10000 0.1 1 10 100 1000 Collector Current ---IC(mA) Saturation Voltage-(mV) VBE(SAT)@IC=10IB Cutoff Frequency vs Collector Current 100 1000 10000 1 10 100 Collector Current---IC(mA) Cutoff Frequency(MHz) VCE=20V Power Derating Curve 100 150 200 250 0 50 100 150 Ambient Temperature---TA(℃ ) Power Dissipation---PD (mW)

CYStech Electronics Corp. Spec. No. : C228N3-H Issued Date : 2002.05.11 Revised Date : 2005.01.12 Page No. : 4/4 BTN3904N3 CYStek Product Specification SOT-23 Dimension *: Typical H 0.0005 0.0040 0.013 0.10 Notes: 1Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: 42 Alloy ; solder plating
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. H JKD A L GV C B S Style: Pin 1.Base 2.Emitter 3.Collector Marking: TE 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3