BTB04-600SL ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc Triacs B T B 0 4 - 6 0 0 S L
FEATURES
- With TO-220AB non insulated package
- Suitables for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak reverse voltage 600 V IT(RMS) RMS on-state current (full sine wave)Tj=105℃ 4 A ITSM Non-repetitive peak on-state current tp=20ms 35 A Tj Operating junction temperature 110 ℃ Tstg Storage temperature -45~150 ℃ Rth(j-c) Thermal resistance, junction to case 3 ℃/W Rth(j-a) Thermal resistance, junction to ambient 60 ℃/W ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MAX UNIT IRRM Repetitive peak reverse current VR=VRRM, VR=VRRM, Tj=125℃ 0.01 0.5 mA IDRM Repetitive peak off-state current VD=VDRM, VD=VDRM, Tj=125℃ 0.01 0.5 mA IGT Gate trigger current VD=12V; RL= 33Ω mA Ⅱ 10 Ⅲ 10 Ⅳ 25 IH Holding current I GT= 0.1A, Gate Open 15 mA VGT Gate trigger voltage all quadrant VD=12V; RL= 30Ω 1.3 V VTM On-state voltage IT= 5A ; tp= 380μs 1.5 V