BTB04-600 ISC
Document overview
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Technical content
isc website： www.iscsemi.com isc &iscsemi isregisteredtrademark iscTriacs BTB04-600
FEATURES
- WithTO-220AB noninsulatedpackage
- Suitablesforgeneral purposeapplications wheregate high sensitivityisrequired.Application on 4Qsuch as phasecontrol and staticswitching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitivepeak off-state voltage 600 V VRRM Repetitivepeak off-state voltage 600 V IT(RMS) RMS on-statecurrent(fullsine wave)Tj=95℃ 4 A ITSM Non-repetitivepeak on-statecurrent tp=10ms 40 A Tj Operatingjunction temperature 110 ℃ Tstg Storagetemperature -40~150 ℃ Rth(j-c) Thermalresistance,junction tocase 2.4 ℃/W Rth(j-a) Thermalresistance,junction toambient 60 ℃/W ELECTRICALCHARACTERISTICS (TC=25℃ unlessotherwise specified) SYMBOL PARAMETER CONDITIONS MAX UNIT IRRM Repetitivepeak reversecurrent VR=VRRM, VR=VRRM,Tj=110℃ 0.01 0.75 mA IDRM Repetitivepeak off-state current VD=VDRM, VD=VDRM,Tj=110℃ 0.01 0.75 mA IGT Gatetriggercurrent VD=12V;RL=30Ω mA Ⅱ 10 Ⅲ 10 Ⅳ 25 IH Holdingcurrent IGT=0.1A,Gate Open 25 mA VGT Gatetriggervoltageall quadrant VD=12V;RL=30Ω 1.5 V VTM On-state voltage IT=5.5A;tp=380μs 1.65 V