BTB04 ISC
Document overview
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Technical content
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark iscTriacs BTB04T/D/S/A
FEATURES
- WithTO-220AB noninsulatedpackage
- Suitablesforgeneral purposeapplications wheregate highsensitivity is required.Application on 4Qsuchasphase controlandstatic switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT IT(RMS) RMS on-state current(fullsine wave)Tj=95℃ 4 A ITSM Non-repetitivepeak on-state currenttp=10ms 40 A Tj Operating junction temperature 110 ℃ Tstg Storage temperature -45~150 ℃ Rth(j-c) Thermalresistance,junction tocase 3.2 ℃/W Rth(j-a) Thermalresistance,junction toambient 60 ℃/W SYMBOL PARAMETER 400T/D/S/A 600T/D/S/A 700T/D/S/A UNIT VDRM Repetitivepeak off-state voltage 400 600 700 V VRRM Repetitivepeak reversevoltage 400 600 700 V ELECTRICALCHARACTERISTICS (TC=25℃ unlessotherwise specified) SYMBOL PARAMETER CONDITIONS MAX UNIT IRRM Repetitivepeak reversecurrent VR=VRRM, VR=VRRM,Tj=110℃ 0.01 0.75 mA IDRM Repetitivepeak off-state current VD=VDRM, VD=VDRM,Tj=110℃ 0.01 0.75 mA IGT Gatetriggercurrent Ⅰ-Ⅱ-Ⅲ VD=12V;RL=33Ω T D S A mA5 5 10 10 Ⅳ 5 10 10 25 IH Holdingcurrent IGT=0.1A,Gate Open 15 15 25 25 mA VGT Gatetriggervoltageall quadrant VD=12V;RL=30Ω 1.5 V VTM On-state voltage IT=5A 1.65 V