BT300S PHILIPS

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Philips Semiconductors Product specification Thyristors BT300S series BT300M series GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated thyristors in a plasticSYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, suitable for surface mounting, intended for use in BT300S (or BT300M)- 500R 600R 800R applications requiring high V DRM , Repetitive peak off-state 500 600 800 V bidirectional blocking voltage V RRM voltages capability and high thermal cycling IT(AV) Average on-state current 5 5 5 A performance. Typical applications IT(RMS) RMS on-state current 8 8 8 A include motor control, industrial and ITSM Non-repetitive peak on-state 65 65 65 A domestic lighting, heating and static current switching. PINNING - SOT428 PIN CONFIGURATION SYMBOL PIN Standard Alternative NUMBER S M 1 cathode gate 2 anode anode 3 gate cathode tab anode anode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500R -600R -800R VDRM , VRRM Repetitive peak off-state - 500 1 6001 800 V voltages IT(AV) Average on-state current half sine wave; Tmb ≤ 107 ˚C - 5 A IT(RMS) RMS on-state current all conduction angles - 8 A ITSM Non-repetitive peak half sine wave; Tj = 25 ˚C prior to on-state current surge t = 10 ms - 65 A t = 8.3 ms - 71 A I2tI 2t for fusing t = 10 ms - 21 A 2s dIT/dt Repetitive rate of rise of ITM = 10 A; IG = 50 mA; - 50 A/ µs on-state current after dIG /dt = 50 mA/µs triggering IGM Peak gate current - 2 A VGM Peak gate voltage - 5 V VRGM Peak reverse gate voltage - 5 V PGM Peak gate power - 5 W PG(AV) Average gate power over any 20 ms period - 0.5 W Tstg Storage temperature -40 150 ˚C Tj Operating junction - 125 ˚C temperature tab ak g 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. September 1997 1 Rev 1.100

Philips Semiconductors Product specification Thyristors BT300S series BT300M series THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance - - 2.2 K/W junction to mounting base R th j-a Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 - 75 - K/W junction to ambient STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I GT Gate trigger current V D = 12 V; IT = 0.1 A - 2 15 mA IL Latching current V D = 12 V; IGT = 0.1 A - 10 40 mA IH Holding current V D = 12 V; IGT = 0.1 A - 10 20 mA VT On-state voltage I T = 12 A - 1.35 1.6 V VGT Gate trigger voltage V D = 12 V; IT = 0.1 A - 0.6 1.5 V VD = VDRM(max) ; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V ID , IR Off-state leakage current VD = VDRM(max) ; VR = VRRM(max) ; Tj = 125 ˚C - 0.1 0.5 mA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD /dt Critical rate of rise of VDM = 67% VDRM(max) ; Tj = 125 ˚C; off-state voltage exponential waveform. Gate open circuit 50 100 - V/ µs R GK = 100 Ω 200 1000 - V/ µs tgt Gate controlled turn-on ITM = 10 A; VD = VDRM(max) ; IG = 0.1 A; - 2 - µs time dI G /dt = 5 A/µs tq Circuit commutated V D = 67% VDRM(max) ; Tj = 125 ˚C; - 70 - µs turn-off time I TM = 12 A; VR = 25 V; dITM /dt = 30 A/µs; dVD /dt = 50 V/µs; RGK = 100 Ω September 1997 2 Rev 1.100

Philips Semiconductors Product specification Thyristors BT300S series BT300M series Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS) / IT(AV). Fig.2. Maximum permissible non-repetitive peak on-state current ITSM , versus pulse width tp, for sinusoidal currents, tp ≤ 10ms. Fig.3. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb . Fig.4. Maximum permissible non-repetitive peak on-state current ITSM , versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.5. Maximum permissible repetitive rms on-state current IT(RMS) , versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 107˚C. Fig.6. Normalised gate trigger voltage VGT (Tj)/ VGT (25˚C), versus junction temperature Tj. 0123456 a = 1.57 1.9 2.2 2.8 IT(AV) / A Ptot / W Tmb(max) / C 125 111 118 121.5 114.5 BT300 conduction angle form factor degrees 120 180 2.8 2.2 1.9 1.57 a BT300 1 10 100 1000 Number of half cycles at 50Hz ITSM / A T ITSM time I T Tj initial = 25 C max 100

1000 BT300

I Tj initial = 25 C max T dI /dt limitT 0.01 0.1 1 100 BT150 surge duration / s IT(RMS) / A -50 0 50 100 1500 BT300S Tmb / C IT(RMS) / A 107 C -50 0 50 100 1500.4 0.6 0.8 1.2 1.4 1.6 BT151 Tj / C VGT(Tj) VGT(25 C) September 1997 3 Rev 1.100

Philips Semiconductors Product specification Thyristors BT300S series BT300M series Fig.7. Normalised gate trigger current IGT (Tj)/ IGT (25˚C), versus junction temperature Tj. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. Fig.9. Normalised holding current IH (Tj)/ IH (25˚C), versus junction temperature Tj. Fig.10. Typical and maximum on-state characteristic. Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. Fig.12. Typical, critical rate of rise of off-state voltage, dVD /dt versus junction temperature Tj. -50 0 50 100 1500 0.5 1.5 2.5

3 BT150

IGT(Tj) IGT(25 C) 0 0.5 1 1.5 20 typ VT / V IT / A max Tj = 125 C Tj = 25 C Vo = 1.21 V Rs = 0.0313 ohms BT300 -50 0 50 100 1500 0.5 1.5 2.5 IL(Tj) IL(25 C) 10us 0.1ms 1ms 10ms 0.1s 1s 10s0.01 0.1

10 BT150

Zth j-mb (K/W) tpP t D -50 0 50 100 1500 0.5 1.5 2.5 IH(Tj) IH(25 C) 0 50 100 15010 100 1000 10000 Tj / C dVD/dt (V/us) gate open circuit RGK = 100 Ohms September 1997 4 Rev 1.100

Philips Semiconductors Product specification Thyristors BT300S series BT300M series MECHANICAL DATA Dimensions in mm Net Mass: 1.1 g Fig.13. SOT428 : centre pin connected to tab. MOUNTING INSTRUCTIONS Dimensions in mm Fig.14. SOT428 : minimum pad sizes for surface mounting. Notes 1. Plastic meets UL94 V0 at 1/8". 6.22 max 2.38 max 0.93 max 6.73 max 0.3 10.4 max 0.5 0.8 max (x2) 2.285 (x2) 0.5 seating plane 1.1 0.5 min 5.4 4 min 4.6 tab 7.0 7.0 2.15 2.5 4.57 1.5 September 1997 5 Rev 1.100

Philips Semiconductors Product specification Thyristors BT300S series BT300M series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1997 6 Rev 1.100