BT169GW ISC
Document overview
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Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark iscThyristors BT169GW
DESCRIPTION
- WithSOT-223 packaging
- Highsurgecapability
- Glasspassivatedjunctionsandcentergatefireforgreater parameter uniformity and stability
- MinimumLot-to-Lotvariations forrobustdevice performance andreliable operation
APPLICATIONS
- Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitivepeak off-state voltage 600 V VRRM Repetitivepeak off-state voltage 600 V IT(AV) Averageon-statecurrent 0.63 A IT(RMS) RMSon-state current 1 A PG(AV) Averagegatepower 0.1 W ITSM Non-repetitivepeak on-state current 8 A Tj Operatingjunction temperature -40~110 ℃ Tstg Storagetemperature -40~150 ℃ ELECTRICALCHARACTERISTICS (TC=25℃ unless otherwisespecified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peakoff-state voltage VRRM=600V 5 μA Repetitive peakreverse voltage VRRM=600V;Tj=110℃ 100 IDRM Repetitive peakreverse current VRRM=600V 5 μA Repetitive peakoff-state current VDRM=600V;Tj=110℃ 100 IGT Gatetrigger current VD=12V;IT=10mA 120 μA VTM On-state voltage IT=2A 1.5 V IH Holdingcurrent IGT=0.5mA,VD=12V 5 mA VGT Gatetrigger voltage VD=12V;IT=10mA 0.8 V