BT169G ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark iscThyristors BT169G
FEATURES
- WithTO-92package
- Sensitivegate triggercurrent
- Lowreverse andforward blockingcurrent
- Lowholdingcurrent
- Forgeneral purposeswitchingand phasecontrolapplications.
- MinimumLot-to-Lotvariations forrobustdevice performance andreliable operation ABSOLUTEMAXIMUMRATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitivepeak off-state voltage 600 V VRRM Repetitivepeak off-state voltage 600 V IT(AV) Averageon-state current 0.5 A IT(RMS) RMS on-statecurrent 0.8 A PGM Peakgate power 2 W PG(AV) Averagegate power 0.1 W ITSM Non-repetitivepeak on-statecurrent 8 A Tj Operatingjunction temperature 125 ℃ Tstg Storage temperature -40~+150 ℃ ELECTRICALCHARACTERISTICS (TC=25℃ unlessotherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VDRM Repetitive peakoff-state voltage ID=0.1mA 600 V VRRM Repetitive peakreverse voltage ID=0.5mA 600 V IRRM Repetitive peakreverse current VRRM=600V 10 μA IDRM Repetitive peakoff-state current VDRM=600V 10 μA IGT Gatetriggercurrent VD=12V;IT=10mA 200 μA VTM On-state voltage IT=1A 1.35 V IH Holdingcurrent IGT=0.5mA,VD=12V 5 mA VGT Gatetriggervoltage VD=12V;IT=10mA 0.8 V