BT169D ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc Thyristors B T 1 6 9 D
FEATURES
- With TO-92 package
- Sensitive gate trigger current
- Low reverse and forward blocking current
- Low holding current
- For general purpose switching and phase control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 400 V VRRM Repetitive peak off-state voltage 400 V IT(AV) Average on-state current 0.5 A IT(RMS) RMS on-state current 0.8 A PGM Peak gate power 2 W PG(AV) Average gate power 0.1 W ITSM Non-repetitive peak on-state current 8 A Tj Operating junction temperature 125 ℃ Tstg Storage temperature -40~+ 150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VDRM Repetitive peak off-state voltage I D=0.1mA 400 V VRRM Repetitive peak reverse voltage I D=0.5mA 400 V IRRM Repetitive peak reverse current VRRM=400V 10 μA IDRM Repetitive peak off-state current VDRM=400V 10 μA IGT Gate trigger current V D= 12V; IT= 10mA 200 μA VTM On-state voltage I T=1.2A 1.7 V IH Holding current I GT=0.5mA ,VD=12V 5 mA VGT Gate trigger voltage V D= 12V; IT= 10mA 0.8 V