BT151S-500R ISC

Document overview

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Technical content

INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark1 iscThyristors BT151S-500R

APPLICATIONS

Mesa glass passivation technology； Multilayer metal electrode on the back； Have high blocking voltage andhigh temperaturestability cleaner、Electric tools suchas motorspeed controller； Solid staterelay； Heating controller(temperature)； Otherphase controlcircuit ABSOLUTE MAXIMUM RATINGS(Ta=25℃) ELECTRICALCHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT IRRM Repetitive peakreverse current VRR=500V,Tj=125℃ 1 mA VRR=500V,Tj=25℃ 5 uA IDRM Repetitive peakoff-state current VDR=500V,Tj=125℃ 1 mA VDR=500V,Tj=25℃ 5 uA VTM On-state voltage ITM=24A 1.5 V IGT Gate-triggercurrent VD=12V;RL=100Ω 6 mA VGT Gate-triggervoltage VD=12V;RL=100Ω 1.5 V IH Holdingcurrent IT=0.5A 30 mA IL Latchingcurrent IG=1.2IGT 60 100 mA dv/dt Critical rateofrise ofoff-state voltage VD=2/3VDRMTj=125℃ 500 V/us Rth(j-c) Thermalresistancejunction to mountingbase infreeair 1.75 ℃/W SYMBOL PARAMETER MIN UNIT VDRM Repetitivepeak off-state voltage 500 V VRRM Repetitivepeak reversevoltage 500 V IT(AV) On-statecurrentTc=80℃ 7.5 A ITSM Surge non-repetitive on-state current TP=10ms 80 A PG(AV) Averagegate power 1 W di/dt Repetitive rate of rise of on-state currentaftertriggering Tj=125℃ 50 A/us I2t I2tforfusing t=10ms 64 A2S IGM Peakgate currenttp=20us ,Tj=125℃ 4 A Tj OperatingJunction temperature -40 ~+125 ℃ Tstg Storagetemperature -40 ~+150 ℃