BT151-500 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc Thyristors BT151-500
APPLICATIONS
- For use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor co- ntrol, industrial and domestic lighting, heating and static switching. ABSOLUTE MAXIMUM RATINGS(T a=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 500 V VRRM Repetitive peak reverse voltage 500 V IT(AV) Average on-stage current 8 A IT(RMS) RMS on-state current 12 A ITSM Surge non-repetitive on-state current 100 A PGM Peak gate power dissipation 5 W PG(AV) Average gate power dissipation 0.5 W Tj Operating junction temperature 125 ℃ Tstg Storage temperature -45~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitive peak reverse current VRM=VRRM, VRM=VRRM, Tj=125℃ 0.02 0.5 mA IDRM Repetitive peak off-state current VDM=VDRM, VDM=VDRM , Tj=125℃ 0.02 0.5 mA VTM On-state voltage I TM= 23A 1.75 V IGT Gate-trigger current V D= 12V; IT= 0.1A 8 mA VGT Gate-trigger voltage V D= 12V; IT= 0.1A 1.5 V IH Holding current I T= 0.1A; Gate Open 20 mA Rth(j-c) Thermal resistance Junction to case 1.6 ℃/W