BT150S-600R ISC
Document overview
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Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark iscThyristors BT150S-600R
DESCRIPTION
- WithTO-252 packaging
- Long-term stability
- Thyristorforlinefrequency
- Planarpassivated chip
- MinimumLot-to-Lotvariations forrobustdevice performance andreliable operation
APPLICATIONS
- Switching applications
- Line rectifying 50/60Hz ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitive peakoff-state voltage 600 V VRRM Repetitive peakreverse voltage 600 V IT(AV) Average forward current 2.5 A IT(RMS) RMS on-statecurrent 4 A ITSM Surge non-repetitiveon-state current (1/2cycle,half sinewave) 50Hz 60Hz 38 A PG(AV) Average gatepower dissipation (overany 20msperiod ) 0.5 W Tj Operating junctiontemperature -40~125 ℃ Tstg Storage temperature -40~150 ℃ ELECTRICALCHARACTERISTICS (TC=25℃ unless otherwisespecified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitivepeak reversecurrent VRM=VRRM VDM=VDRM Tj=125℃ 0.5 mAIDRM Repetitivepeak off-state current VTM On-state voltage ITM=5A 1.8 V IGT Gate-triggercurrent VD =12V;IT=0.1A 0.2 mA VGT Gate-triggervoltage VD =12V;IT=0.1A 1.5 V Rth(j-mb) Thermalresistance Junctiontomounting base 3.0 ℃/W