BT134-800E ISC
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
isc website：www.iscsemi.com isc & iscsemi isregisteredtrademark iscThyristors BT134-800E
DESCRIPTION
- WithTO-220 packaging
- Operatingin 4quadrants
- Highcommutationcapability
- MinimumLot-to-Lotvariations forrobustdevice performance andreliable operation
APPLICATIONS
- Switching applications
- Phasecontrol
- Staticswitchingon inductiveorresistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VDRM Repetitivepeak off-state voltage 600 V VRRM Repetitivepeak reversevoltage 600 V IT(RSM) Averageon-state current 4 A ITSM Surge non-repetitiveon-state current 50HZ 60HZ 27 A PG(AV) Averagegate power dissipation(overany 20msperiod ) 0.5 W Tj Operatingjunction temperature -40~125 ℃ Tstg Storage temperature -40~150 ℃ ELECTRICALCHARACTERISTICS (TC=25℃ unless otherwisespecified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT IRRM Repetitivepeak reversecurrent VR=VRRM Rated; VD=VDRM Rated; Tj=125℃ 0.5 mA IDRM Repetitivepeak off-state current VTM On-state voltage IT=5A 1.7 V IGT Gate-triggercurrent VD =12V;IT=0.1A; Ⅰ 35 mAⅡ 35 Ⅲ 35 Ⅳ 70 VGT Gate-triggervoltage VD =12V;IT=0.1A; 1.5 V Rth (j-mb) Junctiontomounting base Halfcycle 3.7 ℃/W