BT131-600E ISC

Document overview

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Technical content

INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc Triacs BT131-600E

FEATURES

  • With TO-92 package
  • Glass passivated,sensitive gate triacs in a plastic envelope
  • Intended for use in general purpose bidirectional switching and phase control applications.
  • These devices are intended to be interfaced directly to microcontrollers,logic intergrated circuits and other low power gate trigger circuit. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak off-state voltage 600 V IT(RMS) RMS on-state current (full sine wave) Tlead≤ 51 ℃ 1 A ITSM Non-repetitive peak on-state current 16 A PGM Peak gate power dissipation 5 W PG(AV) Average gate power dissipation 0.5 W Tj Operating junction temperature 110 ℃ Tstg Storage temperature -45~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VDRM Repetitive peak off-state voltage I D=0.1mA 600 V VRRM Repetitive peak reverse voltage I D=0.5mA 600 V ID Off-state leakage current VD= VDRM(max), Tj= 125℃ 0.5 mA IGT Gate trigger current VD=12V; IT= 0.1A mA Ⅱ 10 Ⅲ 10 Ⅳ 25 VTM On-state voltage I T=1.6A 1.6 V IH Holding current I GT=0.1A ,VD= 12V 5 mA VGT Gate trigger voltage VD=12V ; RL=100Ωall quadrant 1.5 V