BT131 ISC
Document overview
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Technical content
INCHANGESemiconductor iscProductSpecification isc website：www.iscsemi.cn isc & iscsemi isregisteredtrademark iscTriacs BT131
FEATURES
- WithTO-92package
- Glasspassivated,sensitivegate triacsinaplastic envelope
- Intended foruse ingeneralpurpose bidirectionalswitchingand phasecontrol applications.
- Thesedevices are intendedtobe interfaced directlyto microcontrollers,logicintergratedcircuits andotherlowpower gate triggercircuit.
- MinimumLot-to-Lotvariations forrobustdevice performance andreliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitivepeak off-state voltage 600 V VRRM Repetitivepeak off-state voltage 600 V IT(RMS) RMS on-statecurrent(fullsine wave) Tlead≤ 51℃ 1 A ITSM Non-repetitivepeak on-statecurrent 10 A PGM Peakgate power dissipation 5 W PG(AV) Averagegate power dissipation 0.5 W Tj Operatingjunction temperature 110 ℃ Tstg Storagetemperature -40~150 ℃ ELECTRICALCHARACTERISTICS (TC=25℃ unlessotherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VDRM Repetitivepeak off-state voltage ID=0.1mA 600 V VRRM Repetitivepeak reversevoltage ID=0.5mA 600 V ID Off-stateleakage current VD=VDRM(max), Tj=125℃ 0.5 mA IGT Gatetriggercurrent VD=12V;IT=0.1A mA Ⅱ 3 Ⅲ 3 Ⅳ 7 VTM On-state voltage IT=2.0A 1.7 V IH Holdingcurrent IGT=0.1A,VD=12V 5 mA VGT Gatetriggervoltage VD=12V;RL=100Ωallquadrant 1.5 V