BSS138 LEIDITECH
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Technical content
N-Channel 50-V(D-S) MOSFET FEATURE z High density cell design for extremely low R DS(on) z Rugged an d Relaible Maximum ratings (T a =25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage V DS 5 0 Continuous Gate-Source Voltage V GSS ±20 V Continuous Drain Current I D 0.30 A Power Dissipation P D 0.35 W Thermal Resistance from Junction to Ambient R θJA 357 ℃/W Operating Temperature T j 150 Storage Temperature T stg -55 ~+150 SOT-23 1. GATE 2. SOURCE 3. DRAIN MARKING Equivalent Circuit Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors, etc. Battery Operated Systems Solid-State Relays APPLICATION z z z z V (BR)DSS R DS(on) MAX I D V 2.0Ω@10V 300mA 3.0Ω@4.5V BSS138 Plastic-Enhancement Mode Power MOSFET Rev : www.leiditech.com 01.06.2015 1/3
Parameter Symbol Test Condition Min Typ Max Units Off characteristics Drain-source breakdown voltage V (BR)DSS V GS = 0V, I D =250µA 50 V Gate-body leakage I GSS V DS =0V, V GS =±20V ±100 nA V DS =50V, V GS =0V 0.5 µA Zero gate voltage drain current I DSS V DS =30V, V GS =0V 100 nA On characteristics Gate-threshold voltage (note 1) V GS(th) V DS GS , I D =1mA 0.80 1.50 V V GS =10V, I D =0.22A 2.0 Static drain-source on-resistance (note 1) R DS(on) V GS =4.5V, I D =0.22A 3.0 Ω Forward transconductance (note 1) g FS V DS =10V, I D =0.22A 0.12 S Dynamic characteristics (note 2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss V DS =25V,V GS =0V, f=1MHz pF Switching characteristics Turn-on delay time (note 1,2) t d(on) Rise time (note 1,2) t r Turn-off delay time (note 1,2) t d(off) Fall time (note 1,2) t f V DD =30V, V DS =10V, I D =0.29A,R GEN =6Ω ns Drain-source body diode characteristics Body diode forward voltage (note 1) V SD I S =0.44A, V GS = 0V 1.4 V Notes: 1. Pulse Test ; Pulse Wi dth ≤300µs, Duty Cycle ≤2%. 2. These parameters have no way to verify. aT =25 ℃ unless otherwise specified BSS138 Rev : www.leiditech.com 01.06.2015 2/3
MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8° Shanghai Leiditech Electronic Co.,Ltd Email: sale1@leiditech.com Tel : +86- 021 50828806 Fax : +86- 021 50477059 Rev : www.leiditech.com 01.06.2015 3/3