ND2406L ETC1
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Technical content
ND2406L/2410L, BSS129 Siliconix S-52426—Rev. C, 14-Apr-97 N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V (BR)DSV Min (V) rDS(on) Max () V GS(off) (V) ID (A) ND2406L 240 ND2410L 240 10 –0.5 to –2.5 0.18 BSS129 230 20 –0.7 (min) 0.15 Features Benefits Applications High Breakdown V oltage: 260 V Normally “On” Low rDS Switch: 3.5 Low Input and Output Leakage Low-Power Drive Requirement Low Input Capacitance Full-V oltage Operation Low Offset V oltage Low Error V oltage Easily Driven Without Buffer High-Speed Switching Normally “On” Switching Circuits Current Sources/Limiters Power Supply, Converter Circuits Solid-State Relays Telecom Switches TO-226AA (TO-92) Top View S D G 2 TO-92-18CD (TO-18 Lead Form) Top View S G D ND2406L ND2410L BSS129 Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted) Parameter Symbol ND2406L ND2410L BSS129 Unit Drain-Source V oltage V DS 240 240 230 V Gate-Source V oltage V GS 30 30 20 V Continuous Drain Current(TJ = 150C) ID 0.23 0.18 0.15 Continuous Drain Current (TJ = 150C) ID 0.14 0.12 A Pulsed Drain Currenta IDM 0.9 0.9 0.6 Power Dissipation PD 0.8 0.8 1.0 WPower Dissipation PD 0.32 0.32 0.4 W Maximum Junction-to-Ambient R thJA 156 156 125 C/W Operating Junction and Storage Temperature Range TJ, Tstg –55 to 150 C Notes a. Pulse width limited by maximum junction temperature. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70198. Applications information may also be obtained via FaxBack, request document #70612.
ND2406L/2410L, BSS129
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S-52426—Rev. C, 14-Apr-97 Specificationsa Limits ND2406L ND2410L BSS129 Parameter Symbol Test Conditions Typ b Min Max Min Max Min Max Unit Static DiS V GS = –9 V , ID = 10 /C0109A 260 240 Drain-Source Breakdown V oltage V (BR)DSV V GS = –5 V , ID = 10 /C0109A 260 240g V GS = –3 V , ID = 250 /C0109A 260 230 V Gate Source Cutoff V oltage V GS( ff) V DS = 5 V , ID = 10 /C0109A –1.5 –4.5 –0.5 –2.5 Gate-Source Cutoff V oltage V GS(off) V DS = 3 V , ID = 1 mA –0.7 Gate Body Leakage IGSS V DS = 0 V , VGS = 20 V 10 10 100 nAGate-Body Leakage IGSS /C0084/C0074 = /C0049/C0050/C0053/C0095/C0067 50 50 nA V DS = 180 V , VGS = –9 V 1 /C0084/C0074 = /C0049/C0050/C0053/C0095/C0067 200 Drain Cutoff Current ID( ff) V DS = 180 V , VGS = –5 V 1 /C0109ADrain Cutoff Current ID(off) /C0084/C0074 = /C0049/C0050/C0053/C0095/C0067 200 /C0109A V DS = 230 V , VGS = –3 V 0.1 /C0084/C0074 = /C0049/C0050/C0053/C0095/C0067 200 Drain-Saturation Currentc IDSS V DS = 10 V , VGS = 0 V 350 40 40 mA V GS = 2 V , ID = 30 mA 3.3 Drain Source On Resistancec rDS( ) V GS = 0 V , ID = 30 mA 4.5 6 10 Drain-Source On -Resistancec rDS(on) /C0084/C0074 = /C0049/C0050/C0053/C0095/C00677.2 15 25 V GS = 0 V , ID = 14 mA 4 20 Forward Transconductancec gf V DS = 25 V , ID = 250 mA 375 140 mSForward Transconductancec gfs 110 mS Common Source Output Conductancec gos V DS = 10 V , ID = 30 A 70 /C0109S Dynamic Input Capacitance C iss V 25 V V 5V 70 120 120 Output Capacitance C oss V DS = 25 V , VGS = –5 V f = 1 MHz 20 30 30 pF Reverse Transfer Capacitance C rss 10 15 15 Switchingd Turn On Time td(on) 15 Turn-On Time tr /C0086/C0068/C0068/C006125 /C0086/C0044 /C0082/C0076/C0061 /C0056/C0051/C0048 /C0073/C0068/C009430 /C0109/C0065 /C0086/C0071/C0069/C0078/C0061/C0045/C0053/C0086 ns Turn-Off Time td(off) /C0073/C0068/C009430 /C0109/C0065/C0044/C0086/C0071/C0069/C0078/C0061/C0045 /C0053/C0086 /C0082/C0071/C0061/C0050 /C0053 40 ns Turn-Off Time tf 100 Notes a. T A = 25/C0095C unless otherwise noted. VDDV24 b. For DESIGN AID ONLY , not subject to production testing. c. Pulse test: PW /C0118300 /C0109s duty cycle /C01182%. d. Switching time is essentially independent of operating temperature.
ND2406L/2410L, BSS129 Siliconix S-52426—Rev. C, 14-Apr-97 Typical Characteristics (25/C0095C Unless Otherwise Noted) Output Characteristics (ND2410) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage On-Resistance vs. DrainCurrent Transfer Characteristics (ND2406) V GS – Gate-Source V oltage (V) V GS – Gate-Source V oltage (V) – Drain Current (mA)ID – Drain Current (mA)ID – Drain Current (mA)ID– On-Resistance (rDS(on) ) V DS – Drain-to-Source V oltage (V) V DS – Drain-to-Source V oltage (V) Output Characteristics (ND2406) Transfer Characteristics (ND2410) – Drain Current (mA)ID V GS(off) – Gate-Source Cutoff V oltage (V) – On-Resistance (rDS(on) 200 160 120 0 0.4 2 0.8 1.2 1.6 –0.8 V –1 V –1.2 V –1.4 V –1.6 V –1.8 V –2 V 200 160 120 0.2 V 0 V –0.2 V –0.4 V –0.6 V –0.8 V –1 V 500 400 300 –4.5 –3.5 0.5 200 100 –2.5 –1.5 –0.5 25/C0095C 125/C0095C TC = –55/C0095C –1 –2 –6 –3 –4 –5 1000 800 600 400 200 500 400 300 200 100 –55/C0095C TC = 125/C0095C ID – Drain Current (mA) 10 100 1 K ND2410 ND2406 V GS = 0 V rDS @ ID = 30 mA, VGS = 0 V IDSS @ V DS = 7.5 V , VGS = 0 V rDS(on) IDSS – Drain Current (mA)IDSS 25/C0095C –0.6 V –0.4 V V DS = 10 VV DS = 10 V V GS = 2 VV GS = 2 V 0.4 V
ND2406L/2410L, BSS129
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S-52426—Rev. C, 14-Apr-97 Typical Characteristics (25/C0095C Unless Otherwise Noted) (Cont’d) 10 K Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 0.1 0.01 0.1 1 100 10 1 K Forward Transconductance vs. Drain Current Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) Capacitance Load Condition Effects on Switching Normalized Effective Transient Thermal Impedance t1 – Square Wave Pulse Duration (sec) ID – Drain Current (mA)V DS – Drain-to-Source V oltage (V) C – Capacitance (pF) t – Switching Time (ns) 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 156/C0095C/W 3. TJM – TA = PDM ZthJA(t) Notes: PDM ID – Drain Current (mA)TJ – Junction Temperature (/C0095C) rDS(on) – Drain-Source On-Resistance (Normalized) Normalized On-Resistance vs. Junction Temperature gfs – Forward Transconductance (mS) 240 200 160 01 0 5 0 120 20 30 40 C iss C rss C oss 1 100 300 100 tf td(off) tr td(on) V DD = 25 V V GS = 0 to –5 V R G = 25 350 150 1 10 100 1 K 250 200 100 300 –55/C0095C 150/C0095C 25/C0095C V DS = 10 V Pulse Test 80 /C0109s, 1% Duty Cycle 2.25 2.00 1.75 0.50 –50 –10 150 1.50 1.25 30 70 110 1.00 0.75 V GS = 0 V ID = 30 mA V GS = –5 V f = 1 MHz