BSP75G ETC1

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

1 SEMICONDUCTORS

Continuous drain source voltage VDS=60V On-state resistance 550m Nominal load current 1.6A Clamping Energy 550mJ

DESCRIPTION

Self protected low side MOSFET. Monolithic over temperature, over current, over voltage (active clamp) and ESD protected logic level power MOSFET intended as a general purpose switch.

FEATURES

  • High continuous current rating
  • Logic level input
  • Input protection (ESD)
  • Thermal shutdown with auto restart
  • Over load protection
  • Short circuit protection with pulse start capability and auto restart
  • Over voltage protection (active clamp)
  • Load dump protection (actively protects load)

APPLICATIONS

  • Especially suited for loads with a high inrush current such as lamps and motors
  • All types of resistive, inductive and capacitive loads in switching
  • /H9262C compatible power switch for 12V and 24V DC applications and for 42V Powernet
  • Automotive rated
  • Replaces electromechanical relays and discrete circuits BSP75G DRAFT ISSUE C - NOVEMBER 2003 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE IntelliFET™ MOSFET ADVANCE INFORMATION SOT223 PACKAGE PINOUT DIAGRAM FUNCTIONAL BLOCK DIAGRAM

DRAFT ISSUE C - NOVEMBER 2003 ADVANCE INFORMATION PARAMETER SYMBOL V ALUE UNIT Junction to ambient (a) R /H9258JA 50 °C/W THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Continuous drain-source voltage V DS 60 V Drain-source voltage for short circuit protection V DS(SC) 36 V Continuous input voltage V IN -0.2 ... +10 V Peak input voltage V IN -0.2 ... +20 V Operating temperature range T j, -40 to +150 °C Storage temperature range T stg -55 to +150 °C Power dissipation at T A =25°C P D 2.5 W Continuous drain current @ V IN=10V; T A=25°C 2 ID 1.6 A Pulsed drain current @ V IN=10V I DM 3A Unclamped single pulse inductive energy E AS 550 mJ Load dump protection V LoadDump 80 V Electrostatic discharge (Human Body Model) V ESD 4000 V NOTES

2 For a device surface mounted on FR4 PCB measured at t /H1134910s

DRAFT ISSUE C - NOVEMBER 2003 ADVANCE INFORMATION PARAMETER SYMBOL MIN. TYP . MAX. UNIT C ONDITIONS STATIC Drain-source clamp voltage V DS(AZ) 60 70 75 V I D=10mA Off state drain current I DSS 0.1 3 /H9262AV DS=12V, V IN=0V Off state drain current I DSS 31 5 /H9262AV DS=32V, V IN=0V Input threshold voltage V IN(th) 1 2.1 2.5 V I D=10mA Input current I IN 0.7 1.2 mA V IN=+5V Input current I IN 1.5 2.7 mA V IN=+7V Input current I IN 4 7 mA V IN=+10V Static drain-source on-state resistance R DS(on) 520 675 m /H9024VIN=5V, I D=0.7A Static drain-source on-state resistance R DS(on) 385 550 m /H9024VIN=10V, I D=0.7A Continuous load current 2 ID 1.6 A V IN=10V Continuous load current 2 ID 1A V IN=5V Current limit 3 ID(LIM) 0.7 1.1 1.75 A V IN=5V, V DS>5V Current limit 3 ID(LIM) 234 A V IN=10V, V DS>5V DYNAMIC Turn-on time (V IN to 90% I D)t on 42 0 /H9262sR L=22 /H9024, VIN=0 to 10V, VBB=12V Turn-off time (V IN to 90% I D)t off 10 20 /H9262sR L=22 /H9024, VIN=10V to 0V, VBB=12V Slew rate on (70 to 50% V BB) -dV DS/dt on 6.5 20 V/ /H9262sR L=22 /H9024, VIN=0 to 10V, VBB=12V Slew rate off (50 to 70% V BB)D V DS/dt on 3.2 10 V/ /H9262sR L=22 /H9024, VIN=10V to 0V, VBB=12V PROTECTION FUNCTIONS 1 Required input voltage for over temperature protection VPROT 4.5 V Thermal overload trip temperature T JT 150 175 °C Thermal hysteresis 10 °C Unclamped single pulse inductive energy Tj=25°C E AS 550 mJ I D(ISO) =0.7A, VBB=32V ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated) NOTES 1 Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous, repetitive operation. 2 For a device surface mounted on FR4 PCB measured at t/H1134910s. 3 The drain current is limited to a reduced value when Vds exceeds a safe value.

DRAFT ISSUE C - NOVEMBER 2003 Europe Zetex plc Fields New Road Chadderton Oldham, OL9 8NP United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com Zetex GmbH Streitfeldstraße 19 D-81673 München Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc

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Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com © Zetex plc 2003 ADVANCE INFORMATION DIM Millimeters DIM Millimeters MIN MAX MIN MAX A /H50071.80 D 6.30 6.70 A1 0.02 0.10 e 2.30 BASIC A2 1.55 1.65 e1 4.60 BASIC b 0.66 0.84 E 6.70 7.30 b2 2.90 3.10 E1 3.30 3.70 PACKAGE DIMENSIONS PACKAGE OUTLINE