BLW76

BLW76 PHILIPS

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Product specification August 1986 DISCRETE SEMICONDUCTORS BLW76 HF/VHF power transistor

Philips Semiconductors Product specification HF/VHF power transistor BLW76

DESCRIPTION

N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power bands. The transistor presents excellent performance as a linear amplifier in the h.f. band. It is resistance stabilized and is guaranteed to withstand severe load mismatch conditions. Transistors are delivered in matched h FE groups. The transistor has a1⁄2" flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to T h = 25°C Note 1. At 80 W P.E.P. MODE OF OPERATION V CE V IC(ZS) A f MHz PL W G p dB η dB c.w. (class-B) 28 − 108 80 typ. 7,9 typ. 70 − PIN CONFIGURATION Fig.1 Simplified outline. SOT121B. handbook, halfpage MLA876 PINNING - SOT121B. PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.

Philips Semiconductors Product specification HF/VHF power transistor BLW76 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value V CESM max. 70 V Collector-emitter voltage (open base) V CEO max. 35 V Emitter-base voltage (open collector) V EBO max. 4 V Collector current (average) I C(AV) max. 8 A Collector current (peak value); f> 1 MHz I CM max. 20 A R.F. power dissipation (f> 1 MHz); Tmb = 25°CP rf max. 140 W Storage temperature T stg −65 to+ 150 °C Operating junction temperature T j max. 200 °C Fig.2 D.C. SOAR. handbook, halfpage MGP499 11 0 1 0 2 Tmb = 25 °CTh = 70 °C IC (A) VCE (V) I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch Fig.3 R.F. power dissipation; VCE ≤ 28 V; f> 1 MHz. handbook, halfpage 0 50 100 200 150 MGP500 100 Prf (W) Th (°C) ΙΙΙ ΙΙ Ι derate by 0.77 W/K derate by 0.56 W/K THERMAL RESISTANCE (dissipation = 60 W; Tmb =8 2°C, i.e. Th =7 0°C) From junction to mounting base (d.c. dissipation) R th j-mb(dc) = 1,92 K/W From junction to mounting base (r.f. dissipation) R th j-mb(rf) = 1,33 K/W From mounting base to heatsink R th mb-h = 0,2 K/W

Philips Semiconductors Product specification HF/VHF power transistor BLW76 CHARACTERISTICS Tj=2 5°C unless otherwise specified Notes 1. Measured under pulse conditions: tp ≤ 300 µs;δ≤ 0,02. 2. Measured under pulse conditions: tp ≤ 50 µs;δ≤ 0,01. Collector-emitter breakdown voltage VBE = 0; IC = 50 mA V (BR) CES > 70 V Collector-emitter breakdown voltage open base; IC = 50 mA V (BR) CEO > 35 V Emitter-base breakdown voltage open collector; IE = 10 mA V (BR)EBO > 4V Collector cut-off current VBE = 0; VCE = 35 V I CES < 10 mA D.C. current gain(1) IC = 4 A; VCE =5 V h FE 15 to 80 D.C. current grain ratio of matched devices(1) IC = 4 A; VCE =5 V h FE1 /hFE2 < 1,2 Collector-emitter saturation voltage(1) IC = 12,5 A; IB = 2,5 A V CEsat typ. 2,5 V Transition frequency at f = 100 MHz(2) −IE = 4 A; VCB = 28 V f T typ. 315 MHz −IE = 12,5 A; VCB = 28 V f T typ. 305 MHz Collector capacitance at f = 1 MHz IE =Ie = 0; VCB = 28 V C c typ. 125 pF Feedback capacitance at f = 1 MHz IC = 50 mA; VCE = 28 V C re typ. 85 pF Collector-flange capacitance C cf typ. 3 pF Fig.4 Typical values; VCE = 20 V. handbook, halfpage 20.5 1 1.5 10−1 10−2 MGP501 Th = 70 °C 25 °C IC (A) VBE (V)

Philips Semiconductors Product specification HF/VHF power transistor BLW76 Fig.5 Typical values; Tj=2 5°C. handbook, halfpage 01 0 2 0 MGP502 5 V VCE = 28 V hFE IC (A) Fig.6 IE =Ie = 0; f = 1 MHz; Tj= 25°C. handbook, halfpage 02 0 4 0 600 200 400 MGP503 C c (pF) VCB (V) typ Fig.7 VCB = 28 V; f = 100 MHz; Tj=2 5°C. handbook, full pagewidth 600 05 1 5 MGP504 typ 200 400 fT (MHz) −IE (A)

Philips Semiconductors Product specification HF/VHF power transistor BLW76

APPLICATION INFORMATION

VCE = 28 V; Th = 25°C; f1 = 28,000 MHz; f2 = 28,001 MHz OUTPUT POWER G p ηdt (%) I C (A) d 3 d5 IC(ZS) W dB at 80 W P.E.P. dB dB A handbook, full pagewidth 50 Ω MGP505 50 Ω C10 R7 T.U.T. BD228 BD443 C13 C12C11 C14 C15 C16 C4 R2 R5 R1 R4 +VCC

Philips Semiconductors Product specification HF/VHF power transistor BLW76 List of components: C1 = 27 pF ceramic capacitor (500 V) C2 = 100 pF air dielectric trimmer (single insulated rotor type) C3 = 100 pF polystyrene capacitor C4 = C6 = C9 = 100 nF polyester capacitor C5 = 280 pF air dielectric trimmer (single non-insulated rotor type) C7 = C8 = 3,9 nF ceramic capacitor C10 = 2,2 µF moulded metallized polyester capacitor C11 = 180 pF polystyrene capacitor C12 = 2 × 68 pF ceramic capacitors in parallel (500 V) C13 = 120 pF polystyrene capacitor C14 = C15 = 280 pF air dielectric trimmer (single insulated rotor type) C16 = 56 pF ceramic capacitor (500 V) L1 = 108 nH; 4 turns Cu wire (1,6 mm); int. dia. 8,7 mm; length 11,2 mm; leads 2× 7 mm L2 = L4 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L3 = 88 nH; 3 turns Cu wire (1,6 mm); int. dia. 8,0 mm; length 8,0 mm; leads 2× 7 mm L5 = 120 nH; 4 turns Cu wire (1,6 mm); int. dia. 9,3 mm; length 11,2 mm; leads 2× 7 mm R1 = 1,5 k Ω (± 5%) carbon resistor (0,5 W) R2 = 10 Ω wirewound potentiometer (3 W) R3 = 0,9 Ω ; parallel connection of 2× 1,8Ω carbon resistors (± 5%; 0,5 W each) R4 = 60 Ω ; parallel connection of 2× 120 Ω wirewound resistors (5,5 W each) R5 = 56 Ω (± 5%) carbon resistor (0,5 W) R6 = 33 Ω (± 5%) carbon resistor (0,5 W) R7 = 4,7 Ω (± 5%) carbon resistor (0,5 W)

Philips Semiconductors Product specification HF/VHF power transistor BLW76 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. Fig.9 Intermodulation distortion as a function of output power.(1.) handbook, halfpage 0 50 100 −20 −50 −40 −30 MGP506 d3, d5 (dB) P.E.P. (W) VCE = 28 V; IC(ZS) = 50 mA; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25°C; typical values. Fig.10 Double-tone efficiency and power gain as a function of output power. handbook, halfpage 0 50 100 MGP507 P.E.P. (W) ηdt (%) G p (dB) G p ηdt VCE = 28 V; IC(ZS) = 50 mA; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25°C; typical values. Fig.11 Power gain as a function of frequency. handbook, halfpage40 MGP508 11 0 1 0 2 G p (dB) f (MHz) VCE = 28 V; IC(ZS) = 50 mA; PL = 80 W; Th 25 °C; ZL = 3,9Ω . Figs 11 and 12 are typical curves and hold for an unneutralized amplifier in s.s.b. class-AB operation. Fig.12 Input impedance (series components) as a function of frequency. handbook, halfpage10 2.5 7.5 MGP509 11 0 1 0 2 ri (Ω ) 2.5 −2.5 −7.5 xi (Ω ) f (MHz) xi ri VCE = 28 V; IC(ZS) = 50 mA; PL = 80 W; Th 25 °C; ZL = 3,9Ω .

Philips Semiconductors Product specification HF/VHF power transistor BLW76 Fig.13 Power gain as a function of frequency. handbook, halfpage40 MGP510 11 0 1 0 2 G p (dB) f (MHz) VCE = 28 V; IC(ZS) = 50 mA; PL = 80 W; Th =2 5°C; ZL = 3,9Ω ; neutralizing capacitor: 68 pF. Fig.14 Input impedance (series components) as a function of frequency. handbook, halfpage20 MGP511 11 0 1 0 2 ri (Ω ) xi (Ω ) f (MHz) 2.5 −2.5 −7.5 xi ri VCE = 28 V; IC(ZS) = 50 mA; PL = 80 W; Th =2 5°C; ZL = 3,9Ω ; neutralizing capacitor: 68 pF. Figs 13 and 14 are typical curves and hold for a push-pull amplifier with cross-neutralization in s.s.b. class-AB operation. f1 = 28,000 MHz; f2 = 28,001 MHz; VCE = 28 V; Rth mb-h= 0,2 K/W. The graph shows the permissible output power under nominal conditions (VSWR = 1) as a function of the expected VSWR during short-time mismatch conditions with heatsink temperatures as parameter. handbook, halfpage150 100 MGP512 11 0 1 0 2 PLnom (W P.E.P.) (VSWR = 1) 90 °C 70 °C Th ≤ 50 °C VSWR

Philips Semiconductors Product specification HF/VHF power transistor BLW76 R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th =2 5°C List of components: Component layout and printed-circuit board for 108 MHz test circuit are shown in Fig.17. f (MHz) V CE (V) P L (W) P S (W) G p (dB) I C (A) η (%) zi(Ω ) YL (mS) 108 28 80 typ. 13 typ. 7,9 typ. 4,1 typ. 70 0,85 + j1,0 174 − j40 C1 = C9 = C10 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008) C2 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011) C3 = 22 pF ceramic capacitor (500 V) C4ab = 2 × 82 pF ceramic capacitors in parallel (500 V) C5 = 270 pF polystyrene capacitor C6 = 100 nF polyester capacitor C7a = 8,2 pF ceramic capacitor (500 V) C7b = 10 pF ceramic capacitor (500 V) C 8 = 5,6 pF ceramic capacitor (500 V) C11 = 10 pF ceramic capacitor (500 V) L1 = 21 nH; 2 turns Cu wire (1,0 mm); int. dia. 4,0 mm; length 3,5 mm; leads 2× 5 mm L2 = L5 = 2,4 nH; strip (12 mm × 6 mm); tap for L4 at 6 mm from transistor L3 = L7 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L4 = 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2× 5 mm L6 = 49 nH; 2 turns Cu wire (1,6 mm); int. dia. 9,0 mm; length 4,7 mm; leads 2× 5 mm L8 = 56 nH; 2 turns Cu wire (1,6 mm); int. dia. 10,0 mm; length 4,5 mm; leads 2× 5 mm L2 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric. R1 = R2 = 10 Ω (± 10%) carbon resistor Fig.16 Test circuit; c.w. class-B. handbook, full pagewidth 50 Ω 50 Ω MGP513 /,/, /,/, /,/, C2 C3 C4ab C6 R2 C7ab C10 C11 L1 L2 L5 L8 T.U.T. +VCC

Philips Semiconductors Product specification HF/VHF power transistor BLW76 The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets. Fig.17 Component layout and printed-circuit board for 108 MHz test circuit. handbook, full pagewidth MGP514 166 C1 C2 L2 L5 C3 C4a C7b +VCC C10 C11 C7a C4b rivet strip

Philips Semiconductors Product specification HF/VHF power transistor BLW76 Fig.18 VCE = 28 V; f = 108 MHz; Th =2 5°C. handbook, halfpage 02 0 4 0 150 100 MGP515 PL (W) PS (W) typ Fig.19 VCE = 28 V; f = 108 MHz; Th =2 5°C; typical values. handbook, halfpage 0 50 100 150 MGP516 η G p G p (dB) 100 η (%) PL (W) f = 108 MHz; VCE = 28 V; Rth mb-h= 0,2 K/W. The graph shows the permissible output power under nominal conditions (VSWR = 1) as a function of the expected VSWR during short-time mismatch conditions with heatsink temperatures as parameter. handbook, halfpage150 100 MGP517 11 0 1 0 2 PLnom (W) (VSWR = 1) VSWR Th = 50 °C 70 °C 90 °C

Philips Semiconductors Product specification HF/VHF power transistor BLW76 Fig.21 VCE = 28 V; PL = 80 W; Th =2 5°C; typical values. handbook, halfpage 0 100 200 MGP518 xi ri, xi (Ω ) f (MHz) ri Fig.22 VCE = 28 V; PL = 80 W; Th =2 5°C; typical values. 0 100 200 7.5 2.5 −7.5 −2.5 0.5 0.25 −0.25 −0.5 MGP519 R L (Ω ) C L (nF) 0.75 −0.75 f (MHz) R L C L Fig.23 VCE = 28 V; PL = 80 W; Th =2 5°C. handbook, halfpage 0 100 200 MGP520 G p (dB) f (MHz) typ

Philips Semiconductors Product specification HF/VHF power transistor BLW76 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT121B 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 4 leads SOT121B U 3D 1U 2 H H L b Q D U 1 q A F c p w 1 M Mw 2 B C C A AB α 0.51 UNIT A mm Db 5.82 5.56 0.16 0.10 12.86 12.59 12.83 12.57 28.45 25.52 3.30 3.05 6.48 6.22 7.27 6.17 c D 1 U 3U 2 12.32 12.06 1.02 w 1 w 2 45° αL 7.93 6.32 U 1 24.90 24.63 Q 4.45 3.91 q 18.42 F 2.67 2.41 0.02inches 0.229 0.219 0.006 0.004 0.506 0.496 0.505 0.495 1.120 1.005 0.130 0.120 0.255 0.245 0.286 0.243 0.485 0.475 0.040.312 0.249 0.98 0.97 0.175 0.154 0.7250.105 0.095 pH DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification HF/VHF power transistor BLW76 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.