BLW50F

BLW50F PHILIPS

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Product specification August 1986 DISCRETE SEMICONDUCTORS BLW50F HF/VHF power transistor

Philips Semiconductors Product specification HF/VHF power transistor BLW50F

DESCRIPTION

N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, AB and B operated, industrial and military transmitters in the h.f. and v.h.f. band. Resistance stabilization provides protection against device damage at severe load mismatch conditions. Matched h FE groups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance Note 1. At 65W P.E.P. MODE OF OPERATION V CE V f MHz PL W G p dB ηdt IC A IC(ZS) mA dB Th PIN CONFIGURATION handbook, halfpage e c b MBB012 Fig.1 Simplified outline and symbol. halfpage MSB057 PINNING - SOT123 PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.

Philips Semiconductors Product specification HF/VHF power transistor BLW50F RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value V CESM max. 110 V Collector-emitter voltage (open base) V CEO max. 55 V Emitter-base voltage (open collector) V EBO max. 4 V Collector current (average) I C(AV) max. 2,5 A Collector current (peak value); f> 1 MHz I CM max. 7,5 A Storage temperature T stg −65 to+ 150 °C Operating junction temperature T j max. 200 °C Fig.2 D.C. SOAR. handbook, halfpage MGP466 10−1 1 10 10 2 VCE (V) IC (A) Tmb = 25 °C Th = 70 °C I Continuous d.c. and r.f. operation II Short-time operation during mismatch Fig.3 Power derating curves vs. temperature. handbook, halfpage 150 100 100 MGP467

50 Th (°C)

(W) ΙΙ Ι THERMAL RESISTANCE (dissipation = 54 W; Tmb =8 6°C, i.e. Th =7 0°C) From junction to mounting base (d.c. and r.f. dissipation) R th j-mb = 2,1 K/W From mounting base to heatsink R th mb-h = 0,3 K/W

Philips Semiconductors Product specification HF/VHF power transistor BLW50F CHARACTERISTICS Tj=2 5°C Note 1. Measured under pulse conditions: tp ≤ 200 µs;δ≤ 0,02. Collector-emitter breakdown voltage VBE = 0; IC = 25 mA V (BR) CES > 110 V Collector-emitter breakdown voltage open base; IC = 100 mA V (BR) CEO > 55 V Emitter-base breakdown voltage open collector; IE = 10 mA V (BR)EBO > 4V Collector cut-off current VBE = 0; VCE = 55 V I CES < 10 mA Second breakdown energy; L = 25 mH; f = 50 Hz open base E SBO > 8m J R BE =1 0Ω ESBR > 8m J D.C. current gain(1) IC = 1,2 A; VCE =5 V h FE typ. 25 15 to 100 D.C. current gain ratio of matched devices(1) IC = 1,2 A; VCE =5 V h FE1 /hFE2 < 1,2 Collector-emitter saturation voltage(1) IC = 3,0 A; IB = 0,6 A V CEsat typ. 1,2 V Transition frequency at f = 100 MHz(1) −IE = 1,2 A; VCB = 45 V f T typ. 490 MHz −IE = 4,0 A; VCB = 45 V f T typ. 540 MHz Collector capacitance at f = 1 MHz IE =Ie = 0; VCB = 45 V C c typ. 53 pF Feedback capacitance at f = 1 MHz IC = 50 mA; VCE = 45 V C re typ. 35 pF Collector-flange capacitance C cf typ. 2 pF

Philips Semiconductors Product specification HF/VHF power transistor BLW50F Fig.4 VCE = 40 V; Tmb =2 5°C. handbook, halfpage 1.50 0.5 typ 10−1 10−2 MGP468 IC (A) VBE (V) Fig.5 Typical values; Tj=2 5°C. handbook, halfpage 0123 MGP469 hFE IC (A) VCE = 45 V 5 V Fig.6 Typical values; f = 100 MHz; Tj=2 5°C. handbook, halfpage 05 1 0 600 200 400 MGP470 fT (MHz) −IE (A) VCB = 45 V 10 V Fig.7 IE =Ie = 0; f = 1 MHz; Tj= 25°C. handbook, halfpage 02 5 5 0 300 100 200 MGP471 C c (pF) VCB (V) typ

Philips Semiconductors Product specification HF/VHF power transistor BLW50F

APPLICATION INFORMATION

VCE = 45 V; f1 = 28,000 MHz; f2 = 28,001 MHz List of components in Fig.8: Note 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. OUTPUT POWER W G p dB IC A d3(1) dB d5(1) dB Th C1 = C2 = 10 to 780 pF film dielectric trimmer C3 = 22 nF ceramic capacitor (63 V) C4 = 4,7 µF/16 V electrolytic capacitor C5 = 1 µF/75 V solid tantalum capacitor C6 = C7 = 47 nF polyester capacitor (100 V) C8 = 68 pF ceramic capacitor (500 V) C9 = 3,9 nF ceramic capacitor L1 = 3 turns closely wound enamelled Cu wire (1,0 mm); int. dia 9,0 mm; leads 2× 5 mm L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L3 = 1,05 µH; 15 turns enamelled Cu wire (1,0 mm); int. dia. 10 mm; length 17,4 mm; leads 2× 5 mm L4 = 162 nH; 6 turns enamelled Cu wire (1,0 mm); int. dia. 7,0 mm; length 11,6 mm; leads 2× 5 mm R1 = 1,6 Ω ; parallel connection of 3× 4,7Ω carbon resistors (± 5%; 0,125 W) R2 = 47 Ω carbon resistor (± 5%; 0,25 W) R3 = 4,7 Ω carbon resistor (± 5%; 0,25 W) handbook, full pagewidth MGP472 50 Ω 50 Ω C4C3 L3 C8 +VCC +VBB L1 R1 T.U.T. R3C7 C9L4

Philips Semiconductors Product specification HF/VHF power transistor BLW50F Fig.9 Intermodulation distortion (see note on previous page) as a function of output power. Typical values; VCE = 45 V; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 70°C. handbook, full pagewidth −20 −60 01 0 MGP473 −50 −40 −30 (dB) P.E.P. (W) IC = 0.8 A 1.0 A 1.2 A

Philips Semiconductors Product specification HF/VHF power transistor BLW50F VCE = 50 V; f1 = 28,000 MHz; f2 = 28,001 MHz List of components: Note 1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB. OUTPUT POWER G p ηdt(%) I C (A) d 3(1) d5(1) IC(ZS) Th W dB AT 65 W P.E.P. dB dB mA °C C1 = C2 = 10 to 780 pF film dielectric trimmer C3 = C5 = C6 = 220 nF polyester capacitor C4 = 120 pF ceramic capacitor (500 V) C7 = 150 pF ceramic capacitor (500 V) C8 = 47 µF/63 V electrolytic capacitor C9 = 3,9 nF ceramic capacitor L1 = 4 turns closely wound enamelled Cu wire (1,6 mm); int. dia 7,0 mm; leads 2× 5 mm L2 = Ferroxcube wide-band h.f. choke, grade 3B (cat.no. 4312 020 36640) L3 = 9 turns enamelled Cu wire (1,0 mm); int. dia. 10 mm; length 14,5 mm; leads 2× 5 mm L4 = 6 turns enamelled Cu wire (1,0 mm); int. dia. 6,5 mm; length 11,0 mm; leads 2× 5 mm R1 = 2,4 Ω ; parallel connection of 2× 4,7Ω carbon resistors R2 = 39 Ω carbon resistor handbook, full pagewidth MGP474 50 Ω 50 Ω L3 C7 +VCC L1 R1 T.U.T. C9L4 C5 C6 C8C3 temperature compensated bias (Ri < 0.1 Ω )

Philips Semiconductors Product specification HF/VHF power transistor BLW50F Fig.11 Intermodulation distortion as a function of output power(1). handbook, halfpage 02 5 5 0 7 5 −20 −40 −30 MGP475 d3, d5 (dB) P.E.P. (W) VCE = 50 V; IC(ZS) = 50 mA; f1 = 28,000 MHz; f2 = 28,001 MHz; Th =2 5°C; typical values. Fig.12 Double-tone efficiency and power gain as a function of output power. handbook, halfpage 02 5 5 0 7 5 MGP476 G p (dB) P.E.P. (W) ηdt ηdt (%) G p VCE = 50 V; IC(ZS) = 50 mA; f1 = 28,000 MHz; f2 = 28,001 MHz; Th =2 5°C; typical values. Ruggedness in s.s.b. operation The BLW50F is capable of withstanding full load mismatch (VSWR = 50 through all phases) up to 45 W (P.E.P.) under the following conditions: V CE = 50 V; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 70°C; R th mb-h= 0,3 K/W.

Philips Semiconductors Product specification HF/VHF power transistor BLW50F Fig.13 Power gain as a function of frequency. handbook, halfpage30 MGP477 11 0 1 0 2 G p (dB) f (MHz) VCE = 50 V; IC(ZS) = 50 mA; PL = 60 W; Th =2 5°C; ZL = 16Ω . Fig.14 Input impedance (series components) as a function of frequency. handbook, halfpage20 −10 MGP478 11 0 1 0 2 ri, xi (Ω ) f (MHz) xi ri VCE = 50 V; IC(ZS) = 50 mA; PL = 60 W; Th =2 5°C; ZL = 16Ω . Figs 13 and 14 are typical curves and hold for an unneutralized amplifier in s.s.b. class-AB operation.

Philips Semiconductors Product specification HF/VHF power transistor BLW50F PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT123A 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 4 leads SOT123A U 3U 2 H H L b Q D U 1 q A F c p Mw 2 B C C A w 1 M AB α UNIT A mm Db 5.82 5.56 0.18 0.10 9.73 9.47 9.63 9.42 20.71 19.93 3.33 3.04 6.61 6.09 7.47 6.37 c D 1 U 2 U 3 9.78 9.39 1.020.51 w 2w 1 45° αL 5.61 5.16 U 1 25.15 24.38 Q 4.63 4.11 q 18.42 F 2.72 2.31 inches 0.229 0.219 0.007 0.004 0.383 0.373 0.397 0.371 0.815 0.785 0.131 0.120 0.26 0.24 0.294 0.251 0.385 0.370 0.040.020.221 0.203 0.99 0.96 0.182 0.162 0.7250.107 0.091 pH DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification HF/VHF power transistor BLW50F DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.