BLW33

BLW33 PHILIPS

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Product specification August 1986 DISCRETE SEMICONDUCTORS BLW33 UHF linear power transistor

Philips Semiconductors Product specification UHF linear power transistor BLW33

DESCRIPTION

N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiersfor television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent reliability properties. The transistor has a 1⁄4" capstan envelope with ceramic cap. QUICK REFERENCE DATA R.F. performance Note 1. Three-tone test method (vision carrier−8 dB, sound carrier−7 dB, sideband signal−16 dB), zero dB corresponds to peak sync level. MODE OF OPERATION f vision MHz VCE V IC mA Th dim (1) dB Po sync (1) W G p dB class-A; linear amplifier 860 25 300 70 −60 > 1,0 > 10,0 860 25 300 25 −60 typ. 1,15 typ. 10,5 PIN CONFIGURATION Fig.1 Simplified outline. SOT122A. handbook, halfpage Top view MBK187 PINNING - SOT122A. PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.

Philips Semiconductors Product specification UHF linear power transistor BLW33 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value); VBE =0 V CESM max. 50 V open base V CEO max. 30 V Emitter-base voltage (open collector) V EBO max. 4 V Collector current d.c. or average I C max. 1,25 A (peak value); f> 1 MHz I CM max. 1,9 A Total power dissipation up to Tmb =2 5°CP tot max. 19,3 W Storage temperature T stg −65 to+150 °C Operating junction temperature T j max. 200 °C Fig.2 D.C. SOAR. (1) Second breakdown limit (independent of temperature). handbook, halfpage 10−1 MGP442 11 0 1 0 2 IC (A) VCE (V) Tmb = 25 °CTh = 70 °C (1) Fig.3 Power derating curve vs. temperature. handbook, halfpage 0 50 100 MGP443 Ptot (W) Th (°C) THERMAL RESISTANCE (see Fig.4) From junction to mounting base (dissipation = 7,5 W; Tmb = 74,5°C; i.e. Th =7 0°C) R th j-mb = 10,1 K/W From mounting base to heatsink R th mb-h = 0,6 K/W

Philips Semiconductors Product specification UHF linear power transistor BLW33 Example Nominal class-A operation: VCE = 25 V; IC = 300 mA; Th =7 0°C. Fig.4 shows: R th j-h max. 10,7 K/W Tj max. 150 °C Typical device: Rth j-h typ. 8,25 K/W Tj typ. 132 °C Fig.4 Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink and junction temperature as parameters. (Rth mb-h= 0,6 K/W.) handbook, full pagewidth 0 5 10 15 20 MGP444 15 100 °C 50 °C 75 °C 25 °C 0 °C 175 °C 150 °C 125 °C Tj = 200 °C R th j-h (K/W) Ptot (W) Th = 125 °C 100 °C

Philips Semiconductors Product specification UHF linear power transistor BLW33 CHARACTERISTICS Tj=2 5°C unless otherwise specified Notes 1. Measured under pulse conditions: tp ≤ 300 µs;δ≤ 0,02. 2. Measured under pulse conditions: tp ≤ 50 µs;δ≤ 0,01. Collector-emitter breakdown voltage VBE = 0; IC = 4 mA V (BR)CES > 50 V open base; IC = 30 mA V (BR)CEO > 30 V Emitter-base breakdown voltage open collector; IE = 2 mA V (BR)EBO > 4V Collector cut-off current VBE = 0; VCE = 30 V I CES < 1,0 mA VBE = 0; VCE = 30 V; Tj= 175°CI CES < 2,5 mA D.C. current gain typ. 40IC = 300 mA; VCE = 25 V h FE IC = 300 mA; VCE = 25 V; Tj= 175°Ch FE < 120 Collector-emitter saturation voltage(1) IC = 600 mA; IB = 60 mA V CEsat typ. 450 mV Transition frequency at f = 500 MHz(2) −IE = 300 mA; VCB = 25 V f T typ. 3,4 GHz −IE = 600 mA; VCB = 25 V f T typ. 3,1 GHz Collector capacitance at f = 1 MHz IE =Ie = 0; VCB = 25 V C c typ. 6,6 pF Feedback capacitance at f = 1 MHz IC = 20 mA; VCE = 25 V C re typ. 3,5 pF Collector-stud capacitance C cs typ. 1,2 pF

Philips Semiconductors Product specification UHF linear power transistor BLW33 Fig.5 Typical values; Tj=2 5°C. handbook, halfpage 0 0.5 1 1.5 MGP445 hFE IC (A) VCE = 25 V 5 V Fig.6 IE =Ie = 0; f = 1 MHz; Tj=2 5°C. handbook, halfpage 01 0 2 0 3 0 typ MGP446 C c (pF) VCB (V) Fig.7 VCB = 25 V; f = 500 MHz; Tj=2 5°C. handbook, full pagewidth 1.5 0 0.5 MGP447 typfT (GHz) −IE (A)

Philips Semiconductors Product specification UHF linear power transistor BLW33

APPLICATION INFORMATION

1. Three-tone test method (vision carrier−8 dB, sound carrier−7 dB, sideband signal−16 dB), zero dB corresponds to peak sync level. List of components: fvision(MHz) V CE (V) I C (mA) T h (°C) d im (dB)(1) Po sync (W) (1) G P (dB) 860 25 300 70 −60 > 1,0 > 10 860 25 300 70 −60 typ. 1,07 typ. 10,5 860 25 300 25 −60 typ. 1,15 typ. 10,5 C1 = C3 = 2 to 18 pF film dielectric trimmer (cat. no. 2222 809 05003) C2 = C6 = C8 = 1 to 3,5 pF film dielectric trimmer (cat. no. 2222 809 05001) placed 24 mm, 8 mm and 46 mm respectively from transistor edge C4 = C5 = 4,3 pF multilayer ceramic chip capacitor (ATC 100A-4R3-C-PX-50) C7 = 1,8 to 10 pF film dielectric trimmer (cat. no. 2222 809 05002) C9 = C12 = 1 nF chip capacitor C10 = 100 nF polyester capacitor C11 = C13 = 470 nF polyester capacitor C14 = 10 nF polyester capacitor C15 = 3,3µF/40 F solid aluminium electrolytic capacitor L1 = stripline (5,2 mm× 4,5 mm) L2 = stripline (13,2 mm× 4,5 mm) L3 = stripline (15,0 mm× 4,5 mm) L4 = micro choke 0,47µH (cat. no. 4322 057 04770) L5 = stripline (see Fig.9 printed-circuit board layout) L6 = 4 turns closely wound enamelled Cu wire (1,0 mm); int. dia. 5,5 mm; leads 2× 4 mm L7 = stripline (37,0 mm× 4,5 mm) L8 = stripline (13,5 mm× 4,5 mm) Fig.8 Test circuit at fvision= 860 MHz. handbook, full pagewidth MGP448+VBB +VCC 50 Ω L1 L2 L3 T.U.T.C1 C3 C4L4 C10 C11 C12 C13 C14 C15L6 C5 C8 C6 L8C7L7 50 Ω

Philips Semiconductors Product specification UHF linear power transistor BLW33 L1; L2; L3; L5; L7 and L8 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 2,74); thickness 1/16". For bias circuit see Fig.10. The circuit and the components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets. Fig.9 Component layout and printed-circuit board for 860 MHz test circuit. handbook, full pagewidth MGP449 114.5 C11 C10 C1 C3 C4 C6 C12 C14 C15 C13 +VBB +VCC

Philips Semiconductors Product specification UHF linear power transistor BLW33 Fig.10 Bias circuit for class-A amplifier at fvision= 860 MHz. +Vs +VCC +VBB TR1 R5R4 C2C1 D2 C4 R6 MGP437 List of components: C1 = 100 pF ceramic capacitor C2 = C3 = 100 nF polyester capacitor C4 = 10µF/25 V solid aluminium electrolytic capacitor R1 = 150Ω carbon resistor (0,25 W) R2 = 100Ω preset potentiometer (0,1 W) R3 = 82 Ω carbon resistor (0,25 W) R4 = R5 = 2,2 kΩ carbon resistor (0,25 W) R6 = 6Ω; parallel connection of 2× 12 Ω carbon resistors (0,5 W each) R7 = R8 = 820Ω carbon resistor (0,25 W) R9 = 33Ω carbon resistor (0,25 W) D1 = BZY88-C3V3 D2 = BY206 TR1 = BD136 Information for wideband application from 470 to 860 MHz available on request. 1. Three-tone test method (vision carrier−8 dB, sound carrier−7 dB, sideband signal−16 dB), zero dB corresponds to peak sync level. Intermodulation distortion of input signal≤− 75 dB. 2. Two-tone test method (vision carrier 0 dB, sound carrier−7 dB), zero dB corresponds to peak sync level. Cross-modulation distortion (d cm ) is the voltage variation (%) of sound carrier when vision carrier is switched from 0 dB to−20 dB. Fig.11 Intermodulation distortion (dim)(1.) and cross-modulation distortion (dcm )(2.) as a function of output power. Typical values; VCE = 25 V; IC = 300 mA; fvision= 860 MHz;− − −Th =2 5°C;  Th =7 0°C. handbook, full pagewidth −50 −65 01 3 MGP450 −60 −55 dim (dB) dcm (%) dim dcm Po sync (W)

Philips Semiconductors Product specification UHF linear power transistor BLW33 Fig.12 Input impedance (series components). Typical values; VCE = 25 V; IC = 300 mA; Th =7 0°C. handbook, halfpage5 −10 −15 MGP451 10 10 2 103 ri, xi (Ω ) f (MHz) xi ri Fig.13 Load impedance (series components). Typical values; VCE = 25 V; IC = 300 mA; Th =7 0°C. handbook, halfpage50 MGP452 10 10 2 103 R L, XL (Ω ) f (MHz) XL R L Fig.14 Typical values; VCE = 25 V; IC = 300 mA; Th =7 0°C. handbook, halfpage35 MGP453 10 10 2 103 G p (dB) f (MHz) Ruggedness The BLW33 is capable of withstanding a load mismatch (VSWR = 50 through all phases) under the following conditions: f = 860 MHz; V CE = 25 V; IC = 300 mA; Th =7 0°C and PL = 2 W.

Philips Semiconductors Product specification UHF linear power transistor BLW33 PACKAGE OUTLINE UNIT A D 1 W REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ mm 8-32 UNC α 90° SOT122A 97-04-18 H b H L detail X Db 5.85 5.58 0.18 0.14 5.97 4.74 cM 1 M 1.02 NN 3 11.82 11.04 w 1 0.381 Q 3.38 2.74 3.86 2.92 H 27.56 25.78 9.91 9.14 3.18 2.66 1.66 1.39 7.50 7.23 6.48 6.22 7.24 6.93 L N 1 max. 0 5 10 mm scale D 2 M ceramic BeO metal W Q A N N 1 N 3 M 1 D c X Studded ceramic package; 4 leads SOT122A α DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) A w 1 AM D 1 D 2

Philips Semiconductors Product specification UHF linear power transistor BLW33 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.