BLV25

BLV25 PHILIPS

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Technical content

Product specification August 1986 DISCRETE SEMICONDUCTORS BLV25 VHF power transistor

Philips Semiconductors Product specification VHF power transistor BLV25

DESCRIPTION

N-P-N silicon planar epitaxial transistor primarily for use in

FEATURES

• internally matched input for wideband operation and high power gain;
• multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile;
• gold-metallization ensures excellent reliability. The transistor has a 1⁄2in 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Th =2 5°C in an unneutralized common-emitter class-B circuit. MODE OPERATION VCE V f MHz PL W PS W G p dB η narrow band; c.w. 28 108 175 < 17,5 > 10,0 > 65 PIN CONFIGURATION Fig.1 Simplified outline, SOT119A. handbook, halfpage MSB006 PINNING PIN DESCRIPTION 1 emitter 2 emitter 3 base 4 collector 5 emitter 6 emitter PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.

Philips Semiconductors Product specification VHF power transistor BLV25 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value); VBE =0 V CESM max. 65 V open base V CEO max. 33 V Emitter-base voltage (open collector) V EBO max. 4 V Collector current d.c. or average I C ; IC(AV) max. 17, 5 A (peak value); f> 1 MHz I CM max. 35 A Total power dissipation at Tmb =2 5°CP tot (d.c.) max. 220 W Storage temperature T stg −65 to +150 °C Operating junction temperature T j max. 200 °C Fig.2 D.C. SOAR. (1) Second breakdown limit. handbook, halfpage 102 MGP294 11 0 1 0 2 IC (A) VCE (V) Tmb = 25 °C Th = 70 °C (1) Fig.3 Power derating curves vs. temperature. I Continuous d.c. operation II Continuous r.f. operation (f> 1 MHz) III Short-time operation during mismatch; (f> 1 MHz). handbook, halfpage 0 100 300 100 200 MGP295

50 Th (°C)

ΙΙΙ ΙΙ Ι Ptot (W) THERMAL RESISTANCE (dissipation = 150 W; Tmb =7 2°C, i.e. Th =4 2°C) From junction to mounting base (d.c. dissipation) R th j-mb(dc) max 0,85 K/W From junction to mounting base (r.f. dissipation) R th j-mb(rf) max 0,60 K/W From mounting base to heatsink R th mb-h max 0,2 K/W

Philips Semiconductors Product specification VHF power transistor BLV25 CHARACTERISTICS Tj=2 5°C Notes 1. Measured under pulse conditions: tp ≤ 300 µs;δ≤ 0,02. 2. Measured under pulse conditions: tp ≤ 50 µs;δ≤ 0,01. Collector-emitter breakdown voltage VBE =0 ;IC =5 0m A V (BR)CES > 65 V open base; IC = 200 mA V (BR)CEO > 33 V Emitter-base breakdown voltage open collector; IE =2 0m A V (BR)EBO > 4V Collector cut-off current VBE =0 ;VCE = 33 V I CES < 25 mA Second breakdown energy; L = 25 mH; f = 50 Hz open base E SBO > 20 mJ R BE =1 0Ω ESBR > 20 mJ D.C. current gain(1) IC = 8,5 A; VCE =2 5V h FE typ. 50 15 to 100 Collector-emitter saturation voltage(1) IC = 20 A; IB = 4,0 A V CEsat typ. 1,6 V Transition frequency at f= 100 MHz(2) −IE = 8,5 A; VCB =2 5V f T typ. 600 MHz −IE = 20 A; VCB =2 5V f T typ. 600 MHz Collector capacitance at f = 1 MHz IE =Ie = 0; VCB =2 5V C c typ. 275 pF Feedback capacitance at f=1M H z IC = 100 mA; VCE =2 5V C re typ. 155 pF Collector-flange capacitance C cf typ. 3 pF

Philips Semiconductors Product specification VHF power transistor BLV25 Fig.4 VCE = 25 V; Tj =2 5°C. handbook, halfpage MGP296

10 IC (A)

Fig.5 VCB = 25 V; f = 100 MHz; Tj=2 5°C. handbook, halfpage 01 0 3 0 800 MGP297 400 fT (MHz) typ −IE (A) Fig.6 IE =Ie = 0; f = 1 MHz; Tj=2 5°C. handbook, halfpage 01 0 2 0 3 0 600 C c (pF) MGP298 VCB (V) 300 typ

Philips Semiconductors Product specification VHF power transistor BLV25

APPLICATION INFORMATION

R.F. performance in narrow band c.w. operation (common-emitter class-B circuit) Th =2 5°C List of components Note 1. ATC means American Technical Ceramics. f MHz VCE V PL W PS W G p dB IC A η 108 28 175 < 17,5 > 10,0 < 9,6 > 65 typ. 13,9 typ. 11,0 typ. 8,9 typ. 70 C1 = C3 = 7 to 100 pF film dielectric trimmer (cat. no. 2222 809 07015) C2 = C4 = C5 = C6 = C7 = 100 pF (500 V) multilayer ceramic chip capacitor (ATC(1)); except for C2 these capacitors are placed 7 mm from transistor edge C8 = C10 = 470 pF multilayer ceramic chip capacitor (cat. no. 2222 856 13471) C9 = C15 = 40 pF, parallel connection of 4 x 10 pF lead feed-through capacitors (cat. no. 2222 702 05109) C11 = 100 nF multilayer ceramic chip capacitor (cat. no. 2222 852 59104) C12 = C16 = 7 to 47 pF precision tuning capacitor (cat. no. 2222 805 00174) C13 = 19 pF, parallel connection of 4 x 4,7 pF lead feed-through capacitors (cat. no. 2222 702 04478) C14 = 6,8µF/63 V electrolytic capacitor L1 = Cu strip (10 mm× 4 mm × 0,5 mm) L2 = strip on printed-circuit board L3 = 7 turns closely wound enamelled Cu wire (0,3 mm); int. dia. 3,0 mm; leads 2× 6 mm L4 = L8 = L9 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L5 = 3 turns enamelled Cu wire (1,6 mm); int. dia. 8 mm; length 9 mm; leads 2× 5 mm L6 = Cu strip (27 mm× 9 mm × 0,5 mm) L7 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 8 mm; length 9 mm; leads 2× 10 mm L2 is strip on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16 in. R1 = 10Ω carbon resistor handbook, full pagewidth MGP299 50 Ω 50 Ω C3C2 C8 C10 C11 C14 C9 C13 C15 C12 C16 L6 L7 C5C4 T.U.T. +VCC Fig.7 Class-B test circuit at f = 108 MHz.

Philips Semiconductors Product specification VHF power transistor BLV25 Fig.8 Component layout and printed-circuit board for 108 MHz class-B test circuit. The circuit and the components are on one side of the epoxy fibre-glass board, the other side is unetched copper to serve as a ground-plane. Earth connections are made by means of fixing screws. Additionally copper straps are used under the emitters and at the input and output to provide direct contact between the copper on the component side and the ground-plane. MGP300 L8, L9 C11C8 C10 R1L4 C6, C7 C3C1 C4, C5 strip C13 strip strip C12 stop C16 stop C15 strip +VCC 7 mm 270

Philips Semiconductors Product specification VHF power transistor BLV25 Fig.9 R.F. SOAR. handbook, halfpage200 MGP301 11 0 1 0 2 100 PL (W) VSWR 25 °C 50 °C 70 °C 25 °C 50 °C 70 °C Th = ——— f > 1 MHz (continuous); − − − −short time operation during mismatch (f> 1 MHz). Fig.10 Load power as a function of source power. handbook, halfpage 01 0 2 0 3 0 250 200 MGP302 PS (W) 150 100 PL (W) Test circuit tuned for each power level; typical values; VCE = 28 V; f = 108 MHz; Th =2 5°C; class-B operation. Fig.11 Power gain and efficiency as a function of source power. handbook, halfpage 0 100 200 300 MGP303 η (%) PL (W) G p (dB) η G p Test circuit tuned for each power level; typical values; VCE = 28 V; f = 108 MHz; Th =2 5°C; class-B operation. Fig.12 Input impedance (series components). handbook, halfpage 0.5 −0.5 120 MGP304 70 f (MHz) ri, xi (Ω ) xi ri Typical values; VCE = 28 V; PL = 175 W; Th =2 5°C; class-B operation.

Philips Semiconductors Product specification VHF power transistor BLV25 Fig.13 Load impedance (series components). handbook, halfpage 120 MGP305 70 f (MHz) R L, XL (Ω ) R L XL Typical values; VCE = 28 V; PL = 175 W; Th =2 5°C; class-B operation. Fig.14 Power gain as a function of frequency. handbook, halfpage 20 120 MGP306 G p (dB) 70 f (MHz) Typical values; VCE = 28 V; PL = 175 W; Th =2 5°C; class-B operation. OPERATING NOTE for Figs 12, 13 and 14: Below 50 MHz a base-emitter resistor of 4,7Ω is recommended to avoid oscillation. This resistor must be effective for r.f. only.

Philips Semiconductors Product specification VHF power transistor BLV25 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT119A 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 6 leads SOT119A U 2H A F A b Mw 3b1 p w 1 ABM D 1 DU 3 Q c q U 1 C B e M Cw 2H 1 UNIT A mm Db 5.59 5.33 0.18 0.07 12.86 12.59 6.48 22.10 21.08 6.48 6.07 12.76 12.06 7.39 6.32 c eU 2 0.5118.42 qw 1 0.261.02 w 3w 2U 3H 1 18.55 18.28 U 1 25.23 23.95 4.07 3.81 b2b1 5.34 5.08 p 3.31 2.97 Q 4.58 3.98 FH 12.83 12.57 D 1 2.54 2.28 inches 0.220 0.210 0.007 0.003 0.505 0.496 0.255 0.870 0.830 0.255 0.239 0.502 0.475 0.291 0.720 0.993 0.943 0.160 0.150 0.210 0.200 0.130 0.117 0.180 0.157 0.505 0.495 0.100 0.090 DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification VHF power transistor BLV25 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.