BLV11

BLV11 PHILIPS

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Product specification August 1986 DISCRETE SEMICONDUCTORS BLV11 VHF power transistor

Philips Semiconductors Product specification VHF power transistor BLV11

DESCRIPTION

N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to T h = 25°C in an unneutralized common-emitter class-B circuit MODE OF OPERATION V CE V f MHz PL W G p dB η zi Ω YL mS c.w. 13,5 175 15 > 8,0 > 60 2,3 + j2,2 130 − j4,4 c.w. 12,5 175 15 typ. 7,5 typ. 67 −− PIN CONFIGURATION Fig.1 Simplified outline, SOT123. handbook, halfpage MSB057 PINNING PIN DESCRIPTION 1 collector 2 emitter 3 base 4 emitter PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.

Philips Semiconductors Product specification VHF power transistor BLV11 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE =0 ) peak value v CESM max. 36 V Collector-emitter voltage (open base) V CEO max. 18 V Emitter-base voltage (open collector) V EBO max. 4 V Collector current (average) I C(AV) max. 3 A Collector current (peak value); f> 1 MHz I CM max. 8 A R.F. power dissipation (f> 1 MHz); Tmb =2 5°CP rf max. 36 W Storage temperature T stg −65 to+ 150 °C Operating junction temperature T j max. 200 °C Fig.2 D.C. SOAR. handbook, halfpage 01 0 2 0 3.5 0.5 1.5 2.5 MGP261 IC (A) VCE (V) Th = 70 °C Tmb = 25 °C Fig.3 R.F. power dissipation; VCE ≤ 16,5 V; f> 1 MHz. I Continuous d.c. operation II Continuous r.f. operation III Short-time operation during mismatch handbook, halfpage 0 50 100 MGP262 Prf (W) Th (°C) derate by 0.2 W/K

0.16 W/K

Ι ΙΙ ΙΙΙ THERMAL RESISTANCE (dissipation = 15 W; Tmb = 74,5°C, i.e. Th =7 0°C) From junction to mounting base (d.c. dissipation) R th j−mb(dc) = 6,55 K/W From junction to mounting base (r.f. dissipation) R th j−mb(rf) = 4,95 K/W From mounting base to heatsink R th mb−h = 0,3 K/W

Philips Semiconductors Product specification VHF power transistor BLV11 CHARACTERISTICS Tj=2 5°C Note 1. Measured under pulse conditions: tp ≤ 200 µs;δ≤ 0,02. Collector-emitter breakdown voltage VBE = 0; IC = 10 mA V (BR)CES > 36 V Collector-emitter breakdown voltage open base; IC = 50 mA V (BR)CEO > 18 V Emitter-base breakdown voltage open collector; IE = 4 mA V (BR)EBO > 4V Collector cut-off current VBE = 0; VCE = 18 V I CES < 4m A Second breakdown energy; L = 25 mH; f = 50 Hz open base E SBO > 2,5 mJ R BE =1 0Ω ESBR > 2,5 mJ D.C. current gain(1) typ. 40 IC = 1,5 A; VCE = 5 V h FE 10 to 100 Collector-emitter saturation voltage(1) IC = 4,5 A; IB = 0,9 A V CEsat typ. 1,0 V Transition frequency at f = 100 MHz(1) −IE = 1,5 A; VCB = 13,5 V f T typ. 850 MHz −IE = 4,5 A; VCB = 13,5 V f T typ. 800 MHz Collector capacitance at f = 1 MHz IE =Ie = 0; VCB = 13,5 V C c typ. 32 pF Feedback capacitance at f = 1 MHz IC = 200 mA; VCE = 13,5 V C re typ. 23 pF Collector-flange capacitance C cf typ. 2 pF

Philips Semiconductors Product specification VHF power transistor BLV11 Fig.4 Typical values; Tj=2 5°C. handbook, halfpage 0 2.5 5 MGP263 hFE VCE = 13.5 V 5 V IC (A) Fig.5 IE =Ie = 0; f = 1 MHz; Tj=2 5°C. handbook, halfpage 01 0 2 0 100 MGP264 C c (pF) typ VCB (V) Fig.6 Typical values; f = 100 MHz; Tj=2 5°C. handbook, full pagewidth1000 02 6 MGP265 200 400 600 800 −IE (A) fT (MHz) VCB = 13.5 V 10 V

Philips Semiconductors Product specification VHF power transistor BLV11

APPLICATION INFORMATION

R. F. performance in c.w. operation (unneutralized common-emitter class-B circuit) Th =2 5°C List of components: f (MHz) V CE (V) P L (W) P S (W) G p (dB) I C (A) η (%) zi(Ω) YL (mS) 175 13,5 15 < 2,4 > 8,0 < 1,85 > 60 2,3 + j2,2 130 − j4,4 175 12,5 15 − typ. 7,5 − typ. 67 −− C1 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004) C2 = C6 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008) C3 = 47 pF ceramic capacitor (500 V) C4 = 120 pF ceramic capacitor (500 V) C5 = 100 nF polyester capacitor C7 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011) L1 = 2 turns Cu wire (1,6 mm); int. dia. 4,5 mm; length 5,7 mm; leads 2× 5 mm L2 = L6 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L3 = L4 = strip (12 mm× 6 mm); tap for C3 at 5 mm from transistor L5 = 3 turns Cu wire (1,6 mm); int. dia. 7,5 mm; length 7,5 mm; leads 2× 5 mm L7 = 3 turns Cu wire (1,6 mm); int. dia. 6,5 mm; length 7,4 mm; leads 2× 5 mm L3 and L4 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16". R1 = 10Ω carbon resistor Component layout and printed-circuit board for 175 MHz test circuit see Fig.8. Fig.7 Test circuit; c.w. class-B. handbook, full pagewidth MGP253 50 Ω 50 Ω C1 L1 L3 L7L4 C2 C3 T.U.T. +VCC

Philips Semiconductors Product specification VHF power transistor BLV11 The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets. Fig.8 Component layout and printed-circuit board for 175 MHz test circuit. handbook, full pagewidth MGP254 150 C1 C2 L1 C5 R1 +VCC rivet

Philips Semiconductors Product specification VHF power transistor BLV11 Fig.9 Typical values; f = 175 MHz;  VCE = 13,5 V; −−− VCE = 12,5 V. handbook, halfpage 0 2.5 5 7.5 MGP266 PL (W) PS (W) Th = 25 °C 70 °C Fig.10 Typical values; f = 175 MHz.  VCE = 13,5 V; −−− VCE = 12,5 V. handbook, halfpage 51 0 1 5 2 0 7.5 2.5 MGP267 100 G p (dB) G p PL (W) Th = 25 °C Th = 25 °C 70 °C 70 °C η η (%) Fig.11 R.F. SOAR (short-time operation during mismatch); f = 175 MHz; Th =7 0°C; R th mb-h= 0,3 K/W; VCEnom = 13,5 V or 12,5 V; PS =P Snom at VCEnom and VSWR = 1. The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other than the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio with VSWR as parameter. The graph applies to the situation in which the drive (P S/PSnom ) increases linearly with supply over-voltage ratio. handbook, halfpage 1 1.1 1.2 1.3 MGP268 VCE VCEnom PS PSnom PLnom (W) (VSWR = 1) VSWR = 4.5

Philips Semiconductors Product specification VHF power transistor BLV11 Fig.12 Input impedance (series components). Typical values: VCE = 13,5 V; PL = 15 W; Th =2 5°C handbook, halfpage 0 100 200 f (MHz) 300 2.5 −2.5 MGP269 ri ri, xi (Ω ) xi ri xi Fig.13 Load impedance (parallel components). Typical values: VCE = 13,5 V; PL = 15 W; Th =2 5°C handbook, halfpage 0 100 200 f (MHz) 300 −50 −150 −200 −100 MGP270 R L (Ω ) R L C L C L C L (pF) R L Fig.14 Typical values: VCE = 13,5 V; PL = 15 W; Th =2 5°C handbook, halfpage 0 100 200 f (MHz) 300 MGP271 G p (dB) OPERATING NOTE Below 50 MHz a base-emitter resistor of 10Ω is recommended to avoid oscillation. This resistor must be effective for r.f. only.

Philips Semiconductors Product specification VHF power transistor BLV11 PACKAGE OUTLINE REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC EIAJ SOT123A 97-06-28 0 5 10 mm scale Flanged ceramic package; 2 mounting holes; 4 leads SOT123A U 3U 2 H H L b Q D U 1 q A F c p Mw 2 B C C A w 1 M AB α UNIT A mm Db 5.82 5.56 0.18 0.10 9.73 9.47 9.63 9.42 20.71 19.93 3.33 3.04 6.61 6.09 7.47 6.37 c D 1 U 2 U 3 9.78 9.39 1.020.51 w 2w 1 45° αL 5.61 5.16 U 1 25.15 24.38 Q 4.63 4.11 q 18.42 F 2.72 2.31 inches 0.229 0.219 0.007 0.004 0.383 0.373 0.397 0.371 0.815 0.785 0.131 0.120 0.26 0.24 0.294 0.251 0.385 0.370 0.040.020.221 0.203 0.99 0.96 0.182 0.162 0.7250.107 0.091 pH DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

Philips Semiconductors Product specification VHF power transistor BLV11 DEFINITIONS LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Where application information is given, it is advisory and does not form part of the specification.